U-W-N ternary thin film as well as preparation method and application thereof
A U-W-N, thin-film technology, applied in nuclear reactors, fusion reactors, thermonuclear fusion reactors, etc., can solve problems such as limited ability to suppress stimulated Brillouin scattering, complex structural layers of uranium black cavity, and easy excitation of epithermal electrons, etc., to achieve Effects of suppressing M-band hard X-rays and epithermal electron yield, protecting uranium black cavity conversion layer, good interfacial bonding force and chemical compatibility
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[0008] Specific embodiment 1: This embodiment is a UWN ternary film, which is characterized in that the mass fraction of N in the UWN ternary film is x%, and 0
Example Embodiment
[0009] Embodiment 2: This embodiment is a method for preparing a U-W-N ternary film, which is specifically completed as follows: DC reactive magnetron sputtering co-deposition method is adopted, Ar is used as a protective gas, and N 2 As the reaction gas, U target and W target are used for magnetron sputtering deposition by DC power supply to obtain UWN ternary film. The purity of the U target is more than 99%, the purity of the W target is more than 99.99%, and the purity of the Ar Purity>99.9999%, the N 2 The purity of >99.9999%.
Example Embodiment
[0010] Specific embodiment three: the difference between this embodiment and the specific embodiment two is: the specific process of the DC reactive magnetron sputtering co-deposition method is as follows:
[0011] 1. Install 1-9 mandrels on the rotating support table, adjust the distance between U target and the center of the mandrel to be 10cm-20cm, and the center normal of U target and the plane where the mandrel is located are at an angle of 45°; adjust W target and The distance between the center of the mandrel is 10cm~20cm, and the center normal of the W target surface and the plane of the mandrel are at an angle of 45°; U and W targets are symmetrically distributed with the normal of the plane where the mandrel is located;
[0012] 2. Vacuuming by mechanical pump and molecular pump to make the vacuum degree of the deposition chamber reach 1×10 -8 Pa~1×10 -6 Pa, then fill the shielding gas and the reaction gas, the ratio of the gas flow rate of the shielding gas to the gas flo...
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