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Full-inorganic perovskite nanowire self-energized short-wave photoelectric detector and preparation method thereof

A photodetector, nanowire technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as low sensitivity, hindering application, simple structure, etc.

Active Publication Date: 2020-10-27
西安纳智光研科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the reported AIHP photodetectors are based on nano, micro, MSM crystals with simple structure or bulky dark current noise and low sensitivity
Meanwhile, response speeds are reported to range from tens of microseconds to hundreds of milliseconds, which hinders their application in imaging and optical communication

Method used

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  • Full-inorganic perovskite nanowire self-energized short-wave photoelectric detector and preparation method thereof
  • Full-inorganic perovskite nanowire self-energized short-wave photoelectric detector and preparation method thereof
  • Full-inorganic perovskite nanowire self-energized short-wave photoelectric detector and preparation method thereof

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preparation example Construction

[0040] The present invention provides a preparation method of all-inorganic perovskite nanowire self-powered-short-wave photodetector, comprising the following steps:

[0041] 1) Clean the FTO conductive glass substrate: Put the FTO conductive glass substrate into Decon-90 aqueous solution, deionized water, acetone, alcohol, and deionized water for ultrasonic cleaning for 15-20 minutes;

[0042] 2) UV-zone treatment of FTO conductive glass substrate: place the cleaned FTO conductive glass substrate in UV-zone for 10-15 minutes;

[0043] 3) Preparation of electron transport layer: the configured TiO 2 The sol precursor is spin-coated on the processed FTO conductive glass substrate at a speed of 2000-4000rpm, and the spin-coated TiO 2 After the film is preheated at 50-70°C for 20-30min, it is heated from room temperature to 450-500°C within 120-200min, and annealed for 40-60min to obtain dense TiO with a thickness of 40-80nm 2 Electron transport layer;

[0044] 4) Solution me...

Embodiment 1

[0056] 1) Clean the FTO conductive glass substrate: Put the FTO conductive glass substrate into Decon-90 aqueous solution, deionized water, acetone, alcohol, and deionized water for 15 minutes for ultrasonic cleaning;

[0057] 2) UV-zone treatment of FTO conductive glass substrate: put the cleaned FTO conductive glass substrate in UV-zone for 10min;

[0058] 3) Preparation of electron transport layer: the configured TiO 2 The sol precursor was spin-coated on the processed FTO conductive glass substrate at a speed of 2000rpm, and the spin-coated TiO 2 After the film was preheated at 60°C for 30min, it was heated from room temperature to 500°C within 180min, and annealed for 60min to obtain a dense TiO with a thickness of 80nm. 2 Electron transport layer;

[0059] 4) Preparation of the perovskite light-absorbing layer by solution method: 0.5mol / L PbI with a volume of about 80 μL 2 The precursor solution was dropped on the prepared FTO / TiO 2 On the substrate, spin-coat 30s wi...

Embodiment 2

[0065] 1) Clean the FTO conductive glass substrate: Put the FTO conductive glass substrate into Decon-90 aqueous solution, deionized water, acetone, alcohol, and deionized water for 20 minutes;

[0066] 2) UV-zone treatment of FTO conductive glass substrate: place the cleaned FTO conductive glass substrate in UV-zone for 15 minutes;

[0067] 3) Preparation of electron transport layer: the configured TiO 2 The sol precursor was spin-coated on the processed FTO conductive glass substrate at a speed of 3000rpm, and the spin-coated TiO 2 After the film was preheated at 70°C for 30 minutes, it was heated from room temperature to 480°C within 200 minutes, and annealed for 60 minutes to obtain a dense TiO with a thickness of 40nm. 2 Electron transport layer;

[0068] 4) Preparation of perovskite light-absorbing layer by solution method: 0.8mol / L PbI with a volume of about 80 μL 2 The precursor solution was dropped on the prepared FTO / TiO 2 On the substrate, spin-coat 20s with the...

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Abstract

The invention discloses an all-inorganic perovskite nanowire self-energized short-wave photoelectric detector and a preparation method, and the method comprises the steps: sequentially carrying out the spin coating of a TiO2 sol precursor on a processed FTO conductive glass substrate, and obtaining a compact TiO2 electron transmission layer; and then growing a micron-sized CsPbIxCl3-x perovskite nanowire by using a solution method, and preparing a photoelectric detector. The device structure comprises a glass substrate, an FTO electrode, an electron transport layer, a perovskite light absorption layer, a hole transport layer and an electrode from top to bottom. The carbon-based perovskite photoelectric detector based on the CsPbIxCl3-x nanowire has high sensitivity, rapid response and goodstability at the same time, and has picosecond-level dark current and 0.2 A / W excellent photoelectric detection degree within the range of 300-520 nm.

Description

technical field [0001] The invention belongs to the technical field of perovskite photovoltaics, and in particular relates to a self-energy-short-wave photodetector of an all-inorganic perovskite nanowire and a preparation method thereof. Background technique [0002] Photodetectors are important for imaging and optical communication applications and are key components in many electronic products such as digital cameras, smartphones, and medical diagnostic instruments. Currently, most commercial photodetectors are based on conventional crystalline inorganic semiconductors, such as silicon (Si) and indium gallium arsenide (InGaAs), requiring expensive high-vacuum fabrication processes. These devices require an external power supply to enable photodetection. [0003] Solution-fabricated semiconductors, such as organic semiconductors and quantum dots, have been extensively studied as alternatives to inorganic semiconductors in photodetection, especially for some special applic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/115H01L31/032H01L31/0352H01L31/0224H01L31/18B82Y30/00
CPCH01L31/115H01L31/032H01L31/035272H01L31/022408H01L31/18B82Y30/00Y02P70/50
Inventor 朱卫东柴文明张春福陈大正张进成郝跃
Owner 西安纳智光研科技有限公司