High-brightness LED and preparation method thereof
A technology with high brightness and doping concentration, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of complicated high-brightness LED preparation process, difficult control of substrate polishing and thinning process, lack of high-brightness LED, etc., to achieve epitaxy The effect of shortening process time, shortening epitaxy process time, and improving luminous efficiency
A technology with high brightness and doping concentration, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of complicated high-brightness LED preparation process, difficult control of substrate polishing and thinning process, lack of high-brightness LED, etc., to achieve epitaxy The effect of shortening process time, shortening epitaxy process time, and improving luminous efficiency
CN111900240APending Publication Date: 2020-11-06SHANDONG UNIV
Image
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.
[0034] The invention provides a high brightness LED, such as figure 1 As shown, it includes a substrate 1, on which a buffer layer 2, lightly doped and heavily doped nitride alternating layers 3, MQW active layer 4, and p-type semiconductor layer 5 are sequentially grown, lightly doped and heavily doped An n-electrode 6 is provided on the exposed part of the upper surface of the alternating heteronitride layer 3, and a p-electrode 7 is provided on the p-type semiconductor layer 5; as image 3 As shown, the lightly doped and heavily doped nitride alternating layers 3 are alternately stacked low-porosity porous nitride layers and high-porosity porous nitride layers formed by lightly doped nitride layers and heavily doped nitride layers respectively by electrochemical corrosion. ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Doping concentration | aaaaa | aaaaa |
| Doping concentration | aaaaa | aaaaa |
Login to View More
Abstract
The invention discloses a high-brightness LED and a preparation method thereof. The high-brightness LED comprises a substrate; a buffer layer, a lightly-doped and heavily-doped nitride alternating layer, an MQW active layer and a p-type semiconductor layer are grown on the substrate in sequence; an n electrode is arranged on the exposed part of the upper surface of the lightly-doped and heavily-doped nitride alternating layer; a p electrode is arranged on the p-type semiconductor layer; the lightly-doped and heavily-doped nitride alternating layer is alternately stacked low-void-ratio porous nitride layers and high-void-ratio porous nitride layers respectively formed by electrochemical corrosion of lightly-doped nitride layers and heavily-doped nitride layers. According to the high-brightness LED and the preparation method thereof disclosed by the invention, the light-emitting efficiency can be improved while the cost is reduced, the repeatability is high, and the practical applicationis facilitated.
Description
technical field [0001] The invention relates to the technical field of LEDs, in particular to a high-brightness LED and a preparation method thereof. Background technique [0002] As the III-nitride wide bandgap semiconductor materials and devices are more widely used in optoelectronics and power electronics fields such as lighting, display, communication and medical treatment, the nitride wide bandgap semiconductor materials and devices as the representative of the third generation of semiconductors have become the most popular in the world. A new generation of fields that are vying to seize. Due to the characteristics of small size, low cost, good monochromaticity and high efficiency, LED has broad application prospects in the fields of lighting, display and optical communication, and has become a research hotspot in the field of optoelectronics, a new generation of electronic information technology. [0003] The main research work of LED focuses on improving its luminous...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
06 Nov 2020
Publication
CN111900240A
- IPC
- H01L33/40; H01L33/32; H01L33/06; H01L33/00
- CPC
- H01L33/0075; H01L33/06; H01L33/325; H01L33/405; H01L2933/0016
- Inventors
- 张宇; 韩琳