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Over-mode dual-band extended interaction oscillator based on three-dimensional metal gate

A technology of extended interaction and metal grid, applied in the field of vacuum electronic devices, can solve the problems of complicated structure of microwave source system, difficult processing and assembly, reduced device size, etc., and achieves the effect of simple structure, good heat dissipation, and easy processing and assembly.

Active Publication Date: 2020-11-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

Furthermore, with the gradual development of communication and radar systems to higher frequencies, the size of devices has been significantly reduced, processing and assembly difficulties, and low power capacity have made the structure of microwave source systems that work in dual or multiple frequency bands more complex.

Method used

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  • Over-mode dual-band extended interaction oscillator based on three-dimensional metal gate
  • Over-mode dual-band extended interaction oscillator based on three-dimensional metal gate
  • Over-mode dual-band extended interaction oscillator based on three-dimensional metal gate

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Embodiment Construction

[0035] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the implementation methods and accompanying drawings.

[0036]An overmode dual-band extended interaction oscillator based on a three-dimensional metal grid, including a rectangular resonant cavity, an electron beam channel, a three-dimensional metal grid and a dual-port output device, characterized in that a three-dimensional metal grid is arranged inside the rectangular resonant cavity , the three-dimensional metal grid is a metal grid composed of m×k square grids on the xoy plane (a 5×5 square grid is used in this embodiment). Define the transmission direction of the electron beam as the z direction, and the length of the square grid in the metal grating is a 0 = 10 mm, thickness d = 1 mm, the three-dimensional grating formed by periodic parallel arrangement of the three-dimensional metal ...

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Abstract

The invention provides an over-mode dual-band extended interaction oscillator based on a three-dimensional metal gate, and belongs to the field of vacuum electronic devices. The oscillator is based onthe mode selection characteristic of waveguide loaded three-dimensional metal gates, by designing a specific three-dimensional metal gate structure, the extended interaction oscillator can have the advantages of over-mode and double-frequency work at the same time, the electric large size is achieved in a high-frequency band, the power capacity of a device is increased, and machining and assembling are easy; and due to the centralized interaction in the longitudinal direction, the longitudinal length is shorter, the volume of a focusing magnetic field is reduced, and the overall structure ismore compact.

Description

technical field [0001] The invention belongs to the field of vacuum electronic devices, in particular to an extended interaction oscillator with dual-frequency operation and over-mode characteristics. Background technique [0002] With the continuous development and progress of society, people's requirements for electronic information technology continue to increase. In terms of electric vacuum devices, the new generation of microwave vacuum electronic devices is further developed in the direction of high frequency, high power, high efficiency, multi-band and compact. Among many vacuum electronic devices, oscillators are an important class of microwave source devices. Among them, the back wave oscillator is a vacuum electronic device based on the Cerenkov radiation mechanism, which uses the back wave in the slow wave structure to synchronize with the electron beam, thereby realizing the generation of electromagnetic waves, and its essence is still a traveling wave; and The...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/20H01J25/02
CPCH01J23/20H01J25/02H01J2223/20H01J2225/02
Inventor 段兆云王新罗恒宇吕志方张宣铭江胜坤王战亮巩华荣宫玉彬
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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