Thermally activated delayed fluorescence sensitized fluorescent organic light emitting diode and preparation method thereof
A light-emitting diode and fluorescence technology, applied in the fields of semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of slow, triplet exciton quenching, complicated design, etc., and achieve high efficiency.
Active Publication Date: 2020-11-10
SOUTH CHINA UNIV OF TECH
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Problems solved by technology
Although TADF or exciplex can be used as a sensitizer to sensitize fluorescent materials to achieve 100% exciton utilization, thereby achieving high-efficiency and high-stability fluorescent OLEDs, but due to the process of converting triplet excitons into singlet excitons It is relatively slow, and there will still be a certain degree of triplet exciton quenching problem, and it is necessary to realize the energy level matching between the host, the sensitizer and the fluorescent guest and the sufficient energy transfer between the host and the guest, the choice of materials and the device The design is more complex
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[0037]A TADF-sensitized fluorescent OLEDs, the schematic diagram of which is shown in figure 1 Shown, its preparation method comprises the following steps:
[0038] First, ultrasonically treat the ITO glass with an alkaline cleaning agent, then scrub the surface with tap water and rinse the ITO glass surface with deionized water, then dry it with high-purity nitrogen, put it in an oven and bake it at 120°C for 30 minutes, and then treat it with ultraviolet ozone After 6 minutes, put it into the vacuum coating machine and wait until the pressure of the vacuum coating machine drops to 1×10 -4 Pa, on the surface of the ITO conductive glass sequentially vapor-deposited thin film. First, the hole injection layer material HAT-CN is evaporated, and the evaporation rate is The evaporation thickness is 15nm, and then the hole transport layer material TAPC is sequentially evaporated, and the evaporation rate is The evaporation thickness is 60nm; the electron blocking layer material...
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Abstract
The invention discloses a thermally activated delayed fluorescence sensitized organic light-emitting diode and a preparation method thereof. A light-emitting layer of the fluorescence organic light-emitting diode is composed of a host material, a TADF sensitizer and a fluorescence object material. The main body material is formed by blending mCBP and POT2T according to a weight ratio of 1: 1; theTADF sensitizer is Pr1; and the fluorescent object material is DCJTB. According to the TADF sensitized fluorescent OLEDs, high-energy-level excite is adopted as a main body, and a TADF material is adopted as a sensitizer, so the excite main body has an intermolecular RISC process, the TADF sensitizer has an intramolecular RISC process, the TADF sensitizer and an electron acceptor material in the excite main body can also form low-energy-level excite and high-efficiency fluorescent OLEDs.
Description
technical field [0001] The invention belongs to the technical field of organic light-emitting diodes, and in particular relates to a heat-activated delayed fluorescence (TADF)-sensitized organic light-emitting diode with three reverse intersystem crossing (RISC) processes and a preparation method thereof. Background technique [0002] Organic light-emitting diodes (Organic Light-Emitting Diodes, OLEDs) are organic semiconductor light-emitting materials that emit light through carrier injection and recombination under the drive of an electric field. OLEDs have the advantages of thinness, surface emission, self-luminescence, easy processing, large-area fabrication and flexibility, and have great application prospects in the fields of flat panel display and solid-state lighting. [0003] Fluorescent OLEDs have the advantages of good stability, small efficiency roll-off, and low cost. However, due to the limitation of spin prohibition, traditional fluorescent materials cannot us...
Claims
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Login to View More IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/11H10K2101/40H10K50/12H10K71/00
Inventor 马东阁姚晶文代岩峰孙倩杨德志乔现锋陈江山
Owner SOUTH CHINA UNIV OF TECH