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Silicon germanide E-class power amplifier

A technology of power amplifiers and silicon germanium, applied in power amplifiers, amplifiers, amplifier combinations, etc., can solve problems such as difficult to obtain high-efficiency output power, and achieve the effects of fast working speed, simple structure, and low power consumption

Pending Publication Date: 2020-11-10
BEIJING BAIRUI INTERNET TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And the breakdown voltage of CMOS transistors is usually 1.2V or 3.3V, so it is difficult to obtain high-efficiency output power

Method used

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  • Silicon germanide E-class power amplifier
  • Silicon germanide E-class power amplifier
  • Silicon germanide E-class power amplifier

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Embodiment Construction

[0011] In order to make the above features and advantages of the present application more comprehensible, the present application will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods. The detailed description is only for helping the understanding of the present application, and the protection scope of the present application is not limited to the specific description in the specific implementation.

[0012] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is a relationship between these entities or operations. There is no such actual relationship or order between them. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or appara...

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Abstract

The invention discloses a silicon germanide E-class power amplifier, and belongs to the technical field of integrated circuits. The silicon germanide E-class power amplifier comprises an input matching module, an output matching module and an output matching module, wherein the input matching module couples an input constant envelope modulation signal and then outputs the signal; a first-stage amplifying circuit which is used for carrying out first-stage amplification on the coupled signals and then outputting the signals, wherein the first stage is in an AB working state; a second-stage amplification circuit which is used for carrying out second-stage amplification on the power signal after the first-stage amplification and then outputting the power signal, wherein the second stage is inan E-class working state; and a shaping network module, wherein a single-ended output end of the shaping network module is used as the output end of the E-class power amplifier, and the shaping network module performs harmonic filtering on the power signal subjected to the second-stage amplification and outputs a single-ended power signal. According to the silicon germanide E-class power amplifier, two-stage amplification of input signals is achieved through a simple circuit structure, and the silicon germanide E-class power amplifier has the advantages of being high in power efficiency, low in harmonic distortion, simple in structure, high in working speed and low in power consumption.

Description

technical field [0001] The present application relates to the technical field of integrated circuits, in particular to a silicon germanium class E power amplifier. Background technique [0002] With the rapid development of radio frequency integrated circuit technology and the increasing popularity of wireless communication, integrated single-chip RF transceivers in C crystal technology have been used in many applications, but fully integrated C crystal power amplifiers are still a challenge. The power amplifier is referred to as the power amplifier, and its main function is to amplify the input weaker signal, and then output enough power to drive the load. The power amplifier needs to output relatively large power, and consumes more than 90% of the power consumption in the entire radio frequency system, so the efficiency of the power amplifier is very critical. Traditional CMOS power amplifiers have the disadvantages of low breakdown voltage, low output power, and poor eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/217H03F3/21H03F3/213H03F3/68H03F1/26H03F1/32H03F1/02H03F3/45
CPCH03F3/2176H03F3/211H03F3/213H03F3/2178H03F3/68H03F1/26H03F1/3211H03F1/0205H03F3/45475H03F3/45165
Inventor 苏杰韩标徐祎喆朱勇
Owner BEIJING BAIRUI INTERNET TECH CO LTD