Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Triphenyl amine-fluorene-benzimidazole low-band-gap terpolymer, electric storage device and preparation thereof

A technology of gap terpolymers and terpolymers, applied in the fields of triphenylamine-fluorene-benzimidazole low-bandgap terpolymers and their synthesis, electric storage devices and their preparation, which can solve the problem that performance needs to be improved, etc. problems, to achieve the effect of improving carrier injection balance, high catalytic efficiency, and improving thermodynamic and electrochemical stability

Active Publication Date: 2020-11-13
SOUTH CHINA UNIV OF TECH +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the existing polymer electric storage materials are used in electric storage devices, their performance still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Triphenyl amine-fluorene-benzimidazole low-band-gap terpolymer, electric storage device and preparation thereof
  • Triphenyl amine-fluorene-benzimidazole low-band-gap terpolymer, electric storage device and preparation thereof
  • Triphenyl amine-fluorene-benzimidazole low-band-gap terpolymer, electric storage device and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] The preparation of embodiment 1 low bandgap terpolymer:

[0069] (1) Preparation of monomer M1 (1,4-dibromo-12H-benzo[5,6]isoindolo[2,1-a]benzimidazol-12-one): in N 2 Under atmosphere, 2,3-naphthalene dicarboxylic anhydride (0.745g, 0.5mmol), 3,6-dibromo-1,2-phenylenediamine (0.132g, 0.5mmol) were added according to the molar ratio of 1:1, ice Put 15 mL of acetic acid in a three-necked flask, stir and heat up to the reflux of the solution, then carry out constant temperature reaction for 6 hours, cool the reaction to room temperature, filter the crude product after precipitation, wash with deionized water until neutral, put the obtained crude product in a vacuum drying oven Drying; the crude product after drying is separated and purified by column chromatography to obtain monomer M1; the temperature of the vacuum drying is 80-85°C, the time of vacuum drying is 12h, and the pressure of vacuum drying is -30--29KPa ;

[0070] (2) Preparation of monomer M2 (N,N-bis(4-brom...

Embodiment 2 3

[0077] Example 2 Terpolymer is used to prepare electric storage device

[0078] In the present invention, the terpolymer prepared in Example 1 is used as an organic layer to prepare an electric storage device. The structure diagram of the electric storage device is as follows figure 1 As shown, it includes a substrate layer, a cathode layer, an organic layer and an anode layer, the cathode is disposed on the substrate, the organic layer is disposed on the cathode, and the anode is disposed on the organic layer.

[0079] The terpolymer provided in the present invention can be used to make storage materials for electrical storage devices. In the present invention, the 2-position and 7-position of the fluorenyl group are functionalized by using a triphenylamine group and a benzimidazole structure. Among them, the electron-deficient benzimidazole group is an excellent hole carrier, and the fluorene group and triphenylamine group are excellent electron-donating groups, which can ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
areaaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of organic electric storage materials, and discloses a triphenyl amine-fluorene-benzimidazole low-band-gap terpolymer, an electric storage device and preparation thereof. The low-band-gap terpolymer has the following structure: in the formula, R is alkoxyl; R1 is alkyl; m is an integer from 20 to 300; and n is an integer from 20 to 300. The electric storage device comprises an organic layer, the organic layer is a low-band-gap terpolymer; and the electric storage device further comprises a substrate, a cathode and an anode. The invention also discloses preparation methods of the low-band-gap terpolymer and the electric storage device. The terpolymer has a low energy band gap and a strong hole transporting performance, and can improve the performance of the electric storage device. The prepared electric storage device is low in turn-on voltage, low in energy consumption, capable of prolonging the service life of the device, high in switchingcurrent ratio, capable of greatly improving the storage density, capable of performing repeated cyclic reading and writing and excellent in performance.

Description

technical field [0001] The invention belongs to the technical field of organic storage materials, and specifically relates to a triphenylamine-fluorene-benzimidazole low-bandgap terpolymer and a synthesis method thereof, and an electric storage device using the polymer as an organic layer and a preparation method thereof. Background technique [0002] With the explosive growth of global digital information, it is extremely urgent and challenging to develop a new generation of information storage technology based on new functional materials or new storage mechanisms, which will greatly improve the information processing capabilities of computers. The technology of using traditional inorganic semiconductor materials to prepare electrical storage devices has been very mature, making it fully applied in various information fields. The resistive random access memory (RRAM) with a sandwich structure has good mechanical flexibility, stacking feasibility, high data storage density, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/12H01L45/00
CPCC08G61/12C08G61/123C08G2261/12C08G2261/512C08G2261/598C08G2261/592C08G2261/411C08G2261/3241C08G2261/3162C08G2261/3142C08G2261/1424C08G2261/1412H10N70/881H10N70/011
Inventor 汪成虢德超马东阁张洪岩代岩峰常海洋孙治尧乔现峰王淑红
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com