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Eu-MOFs interface modification layer in perovskite solar cell

A technology of interface modification layer and solar cell, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of unfavorable PSC industrial production, single function target, and complicated preparation, so as to improve photoelectric conversion efficiency, good application prospects, and preparation The effect of simple method

Active Publication Date: 2020-11-17
BEIJING INSTITUTE OF TECHNOLOGYGY +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials have a single target, complicated preparation, and high cost, which is not conducive to the industrial production of PSC (perovskite solar cells)

Method used

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  • Eu-MOFs interface modification layer in perovskite solar cell
  • Eu-MOFs interface modification layer in perovskite solar cell
  • Eu-MOFs interface modification layer in perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Dissolve 2.23mg europium nitrate hexahydrate and 1.02mg dimethylamine hydrochloride in 1mL water to prepare solution A; dissolve 1.26mg oxalic acid dihydrate and 1.02mg dimethylamine hydrochloride in 1mL water to prepare into solution B;

[0025] (2) Set the spin-coating speed to 2000rpm, first spin-coat solution A on the SnO 2 On the electron transport layer, solution B was spin-coated immediately after solution A was spin-coated, rinsed with methanol after solution B was spin-coated, and then the ITO conductive glass substrate was placed on a heating plate at 70°C for 5 minutes to remove water and methanol. SnO 2 The Eu-MOFs interface modification layer is formed on the electron transport layer.

[0026] The XRD spectrum of the Eu-MOFs interface modification layer prepared in this example is consistent with the fitting curve of Eu-MOFs, indicating that the SnO 2 Eu-MOFs were successfully synthesized on the electron transport layer.

[0027] Referring to the pr...

Embodiment 2

[0029] (1) Dissolve 2.23mg europium nitrate hexahydrate and 1.02mg dimethylamine hydrochloride in 5mL water to prepare solution A; dissolve 1.26mg oxalic acid dihydrate and 1.02mg dimethylamine hydrochloride in 5mL water to prepare into solution B;

[0030] (2) Set the spin-coating speed to 4000rpm, first spin-coat solution A on the SnO 2 On the electron transport layer, solution B was spin-coated immediately after solution A was spin-coated, rinsed with methanol after solution B was spin-coated, and then the ITO conductive glass substrate was placed on a heating plate at 70°C for 5 minutes to remove water and methanol. SnO 2 The Eu-MOFs interface modification layer is formed on the electron transport layer.

[0031] The XRD spectrum of the Eu-MOFs interface modification layer prepared in this example is consistent with the fitting curve of Eu-MOFs, indicating that the SnO 2 Eu-MOFs were successfully synthesized on the electron transport layer.

[0032] Referring to the pr...

Embodiment 3

[0034] (1) Dissolve 2.23mg europium nitrate hexahydrate and 1.02mg dimethylamine hydrochloride in 10mL water to prepare solution A; dissolve 1.26mg oxalic acid dihydrate and 1.02mg dimethylamine hydrochloride in 10mL water to prepare into solution B;

[0035] (2) Set the spin-coating speed to 3000rpm, first spin-coat solution A on the SnO 2 On the electron transport layer, solution B was spin-coated immediately after solution A was spin-coated, rinsed with methanol after solution B was spin-coated, and then the ITO conductive glass substrate was placed on a heating plate at 70°C for 5 minutes to remove water and methanol. SnO 2 The Eu-MOFs interface modification layer is formed on the electron transport layer.

[0036] according to figure 1 It can be seen that the XRD spectrum of the Eu-MOFs interface modification layer prepared in this example is consistent with the fitting curve of Eu-MOFs, indicating that the SnO 2 Eu-MOFs were successfully synthesized on the electron t...

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Abstract

The invention relates to an Eu-MOFs interface modification layer in a perovskite solar cell, belonging to the technical field of perovskite solar cells. The interface modification layer is located between an electron transport layer and a perovskite light absorption layer, and can passivate perovskite crystal defects and regulate and control the growth process of a perovskite thin film, so the perovskite solar cell has a higher-quality active layer, and the photoelectric conversion efficiency can be improved; moreover, the interface modification layer can be obtained by sequentially spin-coating an aqueous solution of europium nitrate hexahydrate and dimethylamine hydrochloride and an aqueous solution of oxalic acid dihydrate and dimethylamine hydrochloride; and a preparation method of theinterface modification layer is simple in process, low in cost and easy for industrial production, and the interface modification layer has good application prospects.

Description

technical field [0001] The invention relates to a Eu-MOFs interface modification layer in a perovskite solar cell, belonging to the technical field of perovskite solar cells. Background technique [0002] In recent years, organic-inorganic hybrid perovskite photovoltaic materials have attracted extensive attention because of their large extinction coefficient, long carrier diffusion length and high carrier mobility. Since 2009, the photoelectric conversion efficiency of perovskite solar cells has increased from the initial 3.8% to 25.2%. Perovskite light-absorbing film is the core part of perovskite solar cells, and its morphology, structure, size, crystallinity, etc. all have a decisive impact on the photoelectric performance of the device. Therefore, it is very important to obtain high-quality perovskite light-absorbing films, regulate the nucleation rate of perovskite crystals and control their growth. Interface modification is one of the common regulation methods. [...

Claims

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Application Information

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IPC IPC(8): C08G83/00H01L51/46H01L51/42
CPCC08G83/008H10K85/10H10K30/10Y02E10/549Y02P70/50
Inventor 陈棋豆洁
Owner BEIJING INSTITUTE OF TECHNOLOGYGY