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Photoresist composition, method of forming photolithographic pattern using same, and use thereof

A technology of photoresist and composition, applied in the field of photoresist, which can solve the problems of photosensitive delay of positive photoresist, affecting the use effect of photoresist, high cost of resist, etc.

Active Publication Date: 2020-11-17
常州华睿芯材科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing photoresists still have certain deficiencies in use, and storage and transmission conditions are limited
Existing photoresists must be protected from light, sealed, and stored at low temperature. The service life of the photoresist must also be specified. Once the storage time or higher temperature range is exceeded, the negative photoresist will be cross-linked, and the positive photoresist will The glue will cause photosensitive delay, which seriously affects the use effect of photoresist
As a fine chemical, especially high-end photoresists for integrated circuits are expensive
Once it fails, it will cause a lot of waste if it cannot be used

Method used

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  • Photoresist composition, method of forming photolithographic pattern using same, and use thereof
  • Photoresist composition, method of forming photolithographic pattern using same, and use thereof
  • Photoresist composition, method of forming photolithographic pattern using same, and use thereof

Examples

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Effect test

example 1

[0060] 15% by weight of metal oxide nano-clusters, 1.5% by weight of photoacid generator, 0.03% by weight of free radical quencher, and the balance of propylene glycol methyl ether acetate. Wherein, the nanoparticle is Zr 6 o 4 (OH) 4 (MAA) 12 , the photoacid generator is N-hydroxynaphthalimide trifluoromethanesulfonate, and the free radical quencher is 2,2,6,6-tetramethyl-1-piperidine oxide.

example 2

[0062] 15% by weight of metal oxide nano-clusters, 1.5% by weight of photoacid generator, 0.03% by weight of free radical quencher, and the balance of propylene glycol methyl ether acetate. Wherein, the nanoparticle is Zr 6 o 4 (OH) 4 (MAA) 12 , the photoacid generator is N-hydroxynaphthoimide trifluoromethanesulfonate, and the free radical quencher is hydroquinone.

example 3

[0064] 15% by weight of metal oxide nano-clusters, 1.5% by weight of photoacid generator, 0.03% by weight of free radical quencher, and the balance of propylene glycol methyl ether acetate. Wherein, the nanoparticle is Zr 6 o 4 (OH) 4 (MAA) 12 , the photoacid generator is N-hydroxynaphthoimide triflate, and the free radical quencher is 1,4-benzoquinone.

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Abstract

The invention relates to a photoresist composition, and the composition comprises a metal oxide nanocluster, wherein the metal oxide nanocluster comprises a metal oxide core and an organic ligand coordinated with the metal oxide core, the molecular general formula is MxOy(OH)mLn, M is a metal element, L is the organic ligand and is an organic group containing double bonds, 4 < = x < = 8, 2 < = y <= 8, 0 < = m < = 4, and 12 < = n < = 16; a photoacid generator; a free radical quenching agent; and a solvent. The invention further relates to a method of forming a lithographic pattern with the photoresist composition and to the use of the photoresist composition.

Description

technical field [0001] The invention relates to the technical field of photoresists, in particular to a photoresist composition, a method for forming a photoresist pattern with it, and an application thereof. Background technique [0002] Photoresist products (photoresist) are a class of electronic chemicals that use photochemical reactions to transfer fine pattern structures to the surface of wafers. They are mainly used in photolithography, a key process in the microelectronics industry such as integrated circuits and displays. Photoresist, also known as photoresist, shows high sensitivity to light and radiation. After being irradiated by ultraviolet light, excimer laser beam, ion beam, electron beam or X-ray, photocrosslinking or The photodecomposition reaction changes the dissolution properties of the film before and after exposure, so it can be divided into positive photoresist and negative photoresist. As electronic devices continue to develop towards high integration...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/027G03F7/00
CPCG03F7/004G03F7/027G03F7/00
Inventor 徐宏何向明王倩倩
Owner 常州华睿芯材科技有限公司
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