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Controllable chiral structure and control method based on temperature control of GST phase change materials

A chiral structure, temperature control technology, applied in nonlinear optics, instruments, optics, etc., can solve problems such as reduced practical performance, inability to reconfigure, etc., to achieve powerful functions, good circular dichroism, and simple structure.

Active Publication Date: 2022-05-20
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, the optical response of the device is also affected by factors such as the structure and size of the metamaterial, and its inability to be reconfigured also greatly reduces its practical performance.

Method used

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  • Controllable chiral structure and control method based on temperature control of GST phase change materials
  • Controllable chiral structure and control method based on temperature control of GST phase change materials
  • Controllable chiral structure and control method based on temperature control of GST phase change materials

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Embodiment 1

[0033] Such as figure 1 As shown, a controllable chiral structure based on the temperature control of GST phase change materials, including a gold substrate 3, a silicon dioxide film 2 on the surface of the gold substrate 3, and chiral GST prepared on the surface of the silicon dioxide film 2 array1. Wherein, the unit of the chiral GST array 1 is composed of two cuboid GSTs, and the two cuboids GSTs are bonded along the longitudinal part on a plane parallel to the gold substrate 3, that is, the unit is a mirror asymmetric GST structure.

[0034] The thickness of the rectangular parallelepiped GST is 140 nanometers, the length is between 565 nanometers and 915 nanometers, and the width is 160 nanometers. The longitudinal overlapping length of two rectangular parallelepiped GSTs is 50 nanometers. The unit lateral period of the chiral GST array 1 is 400 nanometers, and the vertical period is between 1.1 μm and 1.8 μm. The silicon dioxide thin film 2 has a thickness of 120 nanom...

Embodiment 2

[0041] Such as Figure 4 As shown, a controllable chiral structure based on the temperature control of GST phase change materials, including a gold substrate 3, a silicon dioxide film 2 located on the surface of the gold substrate 3, and a mirror image chirality is prepared on the surface of the silicon dioxide film 2 GST array4. Such as Figure 4 As shown in the middle dotted line box, the unit of the mirror-image chiral GST array 4 is composed of a pair of mirror-image GST chiral structures, and each GST chiral structure is composed of two cuboid GSTs, and the two cuboid GSTs are parallel to the gold substrate 3 Fit along the longitudinal section on the flat surface.

[0042] The thickness of the rectangular parallelepiped GST is 140 nanometers, the length is between 565 nanometers and 915 nanometers, and the width is 160 nanometers. The longitudinal overlapping length of two rectangular parallelepiped GSTs is 50 nanometers. The unit lateral period of the mirror-image chi...

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Abstract

The invention discloses a controllable chiral structure and a control method based on temperature control of a GST phase change material. The structure is composed of periodic units, and each unit is composed of GST micro-nano structure, silicon dioxide film and gold substrate. By preparing a chiral GST array on a silicon dioxide film, the device can exhibit circular dichroism in the near-infrared band, and the quasi-linear adjustment of the circular dichroism can be realized by changing the temperature of the GST. In addition, the inversion of the circular dichroism can be achieved by placing mirror-image chiral GST arrays in the unit structure and controlling the temperature of the GST structures with different chiralities. Compared with the existing chiral metamaterial structure, the invention has the advantages of simple structure, powerful function, wide adjustable wavelength range and dynamic regulation.

Description

technical field [0001] The invention relates to a controllable chiral structure and a control method based on temperature control of a Ge2Sb2Te5 (GST) phase change material. Background technique [0002] A phase change material is a special material whose lattice structure changes with temperature. Under the direct action of an external electric field or thermal stimulus, the temperature rise inside the material will cause the internal structure to transform from an amorphous state to a crystalline state, and With the change of a series of material physical properties such as refractive index, electrical conductivity and Young's modulus, it is widely used in related technologies such as phase change memory and display. Germanium antimony tellurium alloy GST is a commonly used phase change material. When heated to 150 ° C, it changes from amorphous to cubic crystals, and to hexagonal crystals at 200 ° C. After the heat source is removed, the lattice state of the GST material ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/00G02F1/01
CPCG02F1/0063G02F1/009G02F1/0136
Inventor 芮光浩丁传传顾兵崔一平
Owner SOUTHEAST UNIV
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