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Planar spin valve magneto-resistance sensor based on magnetic insulator and preparation method thereof

A magneto-resistive sensor and insulator technology, applied in the fields of magnetic field controlled resistors, manufacturing/processing of electromagnetic devices, components of electromagnetic equipment, etc., can solve the problem of high quality requirements of the tunneling layer and reduce the spin polarization of injected electrons rate, it is difficult to fully realize the magnetoresistance effect, etc., to achieve the effect of reducing power consumption

Active Publication Date: 2020-11-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the lack of dangling bonds on the graphene surface, the deposited oxides are easy to diffuse on the graphene. When the deposited tunneling layer has small holes, part of the current will flow into the graphene through the pores, greatly reducing the spin polarity of injected electrons. Therefore, the quality of the tunneling layer is very high, and it is difficult to fully realize the theoretical magnetoresistance effect experimentally.

Method used

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  • Planar spin valve magneto-resistance sensor based on magnetic insulator and preparation method thereof
  • Planar spin valve magneto-resistance sensor based on magnetic insulator and preparation method thereof

Examples

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Embodiment 1

[0034] In this example, the two magnetic insulators are made of yttrium iron garnet (Y 3 Fe 5 o 12 , YIG) thin film and barium ferrite (BaFe 12 o 19 ) film composition. The thickness of the YIG single crystal film is 100nm, the crystal orientation is (111), the saturation magnetization is 1748Gs, and the coercive force is H C 1Oe; BaFe 12 o 19 The thickness is 500nm, the saturation magnetization Ms is 72emu / g, the out-of-plane remanence ratio is greater than 70%, and the coercive force is H C It is 6900Oe. The non-magnetic heavy metal electrode is Pt, which has a strong spin-orbit coupling effect. Inject a DC current of 1 μA on the Pt electrode / graphene / barium ferrite electrode, apply an out-of-plane magnetic field, and the pure spin current generated by the spin Hall effect passes from the upper surface of the barium ferrite unit through the single-layer graphene Diffusion to the upper surface of the YIG unit, when the external magnetic field changes direction, becau...

Embodiment 2

[0041] In this example, two kinds of magnetic insulators are made of thulium iron garnet (Tm 3 Fe 5 o 12 , TmIG) thin film and barium ferrite (BaFe 12 o 19 ) film composition. The thickness of the TmIG single crystal film is 20nm, the crystal orientation is (111), and the saturation magnetization per unit volume is 84.96emu / cm 3 , coercive force H C About 20Oe; BaFe 12 o 19 The thickness is 500nm, the out-of-plane remanence ratio is greater than 70%, the saturation magnetization Ms is 72emu / g, and the coercive force is H C It is 6900Oe. The non-magnetic heavy metal electrode is Pt, which has a strong spin-orbit coupling effect. Inject a DC current of 1 μA on the Pt electrode / graphene / barium ferrite electrode, apply an out-of-plane magnetic field, and the pure spin current generated by the spin Hall effect diffuses from the upper surface of the barium ferrite unit through graphene to On the upper surface of the TmIG unit, when the direction of the external magnetic fi...

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Abstract

A planar spin valve magneto-resistance sensor based on a magnetic insulator comprises a substrate, a hard magnetic insulator and a soft magnetic insulator which are formed on the substrate. Graphene between the hard magnetic insulator and the soft magnetic insulator is used as a spin flow transmission channel, and a non-magnetic heavy metal electrode is formed on the hard magnetic insulator and the soft magnetic insulator. According to the invention, a non-magnetic heavy metal / graphene / magnetic insulator structure is introduced, the problem of conductivity mismatch between the graphene and themagnetic metal material is avoided, so that the spin polarizability of the injected current is reduced. In the case of a magnetic insulator, charge current cannot flow and only spin current can be propagated, so that power consumption is reduced, direct current is introduced into a hard magnetic insulator unit, pure spin current generated by a spin Hall effect is transported through graphene andcollected by a non-magnetic heavy metal electrode on an adjacent soft magnetic insulator, the size of spin Hall magneto-resistance can be measured, and the direction of an external magnetic field canbe detected.

Description

technical field [0001] The invention relates to a structure of a magnetoresistance sensor, in particular to a planar spin valve magnetoresistance sensor based on a magnetic insulator and a preparation method thereof. Background technique [0002] With the continuous development of the Internet of Things (IOT) technology, the giant magnetoresistance (GMR) sensor, as an important component of non-accessible current detection, has a wide range of technologies that require more and more automatic protection functions and intelligent control. Applications. Due to the advantages of small size, high sensitivity, and easy integration, it has become the first choice for sensors that can be converted into magnetic signal detection such as magnetic field, current, and displacement, and is widely used in magnetic storage, magnetic field and biosensors, and micromechanical systems. [0003] In view of the great demand for linearized giant magnetoresistance sensors in the application fie...

Claims

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Application Information

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IPC IPC(8): G01R33/09H01L43/02H01L43/08H01L43/12
CPCG01R33/091G01R33/095H10N50/80H10N50/01H10N50/10
Inventor 金立川李之仪徐德超张怀武钟智勇林亚宁唐晓莉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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