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Resin composition, laminate, resin composition layer-attached semiconductor wafer, substrate for mounting resin composition layer-attached semiconductor, and semiconductor device

A technology of resin composition and compound, which is applied in the direction of semiconductor devices, synthetic resin layered products, semiconductor/solid device manufacturing, etc., and can solve problems such as inability to obtain joints

Active Publication Date: 2020-11-27
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] In addition, Patent Document 2 describes a resin composition containing a chelated flux and an epoxy resin, which has the disadvantage that the epoxy resin and the chelated flux are bonded at a temperature lower than the bonding temperature in flip-chip mounting. The reaction of the phenolic hydroxyl group possessed proceeds, and good bonding cannot be obtained

Method used

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  • Resin composition, laminate, resin composition layer-attached semiconductor wafer, substrate for mounting resin composition layer-attached semiconductor, and semiconductor device
  • Resin composition, laminate, resin composition layer-attached semiconductor wafer, substrate for mounting resin composition layer-attached semiconductor, and semiconductor device
  • Resin composition, laminate, resin composition layer-attached semiconductor wafer, substrate for mounting resin composition layer-attached semiconductor, and semiconductor device

Examples

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Embodiment 1

[0218] Methyl ethyl ketone (hereinafter, sometimes abbreviated as "MEK") of N,N'-bis(salicylidene)-1,2-propanediamine (manufactured by Tokyo Chemical Industry Co., Ltd.) as a chelated flux (A) ) solution (20 parts by mass in terms of non-volatile components), dicumyl peroxide (manufactured by Kishida Chemical Co., Ltd., 10-hour half-life temperature: 116.4° C.) as a thermal radical polymerization initiator (B) 0.5 parts by mass, R in formula (3) as the first radically polymerizable compound (C) 8 All hydrogen atoms, n 1A MEK solution (8 parts by mass in terms of non-volatile content) of a maleimide compound (BMI-2300, manufactured by Daiwa Chemical Industry Co., Ltd.) of 1 to 3, as the second radically polymerizable compound ( C) MEK solution (25 parts by mass in terms of non-volatile content) of a maleimide compound (BMI-1000P, manufactured by K.I Chemical Industry Co., LTD.), as a third radically polymerizable compound (C) MEK solution of bis-(3-ethyl-5-methyl-4-maleimide ...

Embodiment 2

[0220] As the chelated flux (A), 20 parts by mass of N,N'-bis(salicylidene)-1,3-propanediamine (manufactured by Tokyo Chemical Industry Co., Ltd. ) except that, a varnish was prepared in the same manner as in Example 1, and a laminate was obtained.

Embodiment 3

[0222] As the thermal radical polymerization initiator (B), bis(2-tert-butylperoxyisopropyl)benzene (Perbutyl P, manufactured by NOF Corporation, 10-hour half-life temperature: 119.2°C) was used, and the amount used was changed to Except 0.5 mass parts, the varnish was prepared similarly to Example 1, and the laminated body was obtained.

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Abstract

Provided is a flexible resin composition which achieves both an excellent flux activity and high insulation reliability, and good preservation stability, and which has good workability when being usedas a laminate. This resin composition contains a chelating flux agent (A), a thermal radical polymerization initiator (B), and a radical polymerization compound (C).

Description

technical field [0001] The present invention relates to a resin composition, a laminate using the resin composition, a semiconductor wafer with a resin composition layer, a semiconductor mounting substrate with a resin composition layer, and a semiconductor device. Specifically, the present invention relates to a resin composition useful as an adhesive. Background technique [0002] In recent years, with the miniaturization and high performance of semiconductor devices, as a method of mounting a semiconductor chip (hereinafter, sometimes abbreviated as "chip") on a semiconductor mounting substrate (hereinafter, sometimes abbreviated as "substrate"), Flip-chip mounting is attracting attention. In flip-chip mounting, after bonding a chip to a substrate, it is a common process to fill the gap between the chip and the substrate with an underfill material and then cure it. However, with the miniaturization and high performance of semiconductor devices, the narrowing of the pitc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L101/00C08F222/40C09J4/00C09J11/04C09J11/06C09J133/00H01L21/60H05K1/18
CPCC09J11/06C09D4/00H05K3/305H05K3/3436H05K1/032H05K1/0373C09J7/30C09J2203/326C09J2301/408C08K3/36C08K5/29H01L21/563H01L23/293B23K35/3612C08F222/402Y02P70/50C08L79/085C08L79/02H01L24/29H01L24/73H01L2224/73204H01L24/27H01L2224/27436H01L24/32H01L2224/2784H01L2224/94H01L24/94H01L2224/81203H01L24/81H01L2224/73104H01L2224/81191H01L2224/83191H01L24/83H01L2224/83203H01L2224/2929H01L2224/9211H01L2224/32225H01L2224/16227H01L24/13H01L24/16H01L2224/29291H01L2224/29388H01L2224/13111H01L2224/29191H01L2224/29386H01L2224/13139H01L2224/2919H01L2924/381H01L2224/13147C08F222/40C08F222/404H01L2924/00012H01L2224/27H01L2224/81H01L2224/83H01L2924/0532H01L2924/01012H01L2924/00014H01L2924/0549H01L2924/05381H01L2924/0544H01L2924/01014H01L2924/0132H01L2924/01047H01L2924/0543H01L2924/01013H01L2924/05432H01L2924/05442H01L2924/07025H01L2924/07001H01L2924/0536H01L2924/01042H01L2924/0635H01L2924/059H01L2924/0452H01L2924/0102H01L2924/061H01L2924/0615H01L2924/0695H01L2924/0542H01L2924/0103H01L2924/0105H01L2224/16225H01L2924/00C08F2/44C08F4/38C08K5/20C08K3/013C08L39/04C08L33/00H01L23/29H01L23/31H05K1/18B32B27/281B32B27/36C08G73/1046C08K5/14C08K2201/003H01L23/295
Inventor 冈庭正志泷口武纪东口鉱平木田刚
Owner MITSUBISHI GAS CHEM CO INC