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Photoelectric conversion element and photoelectric conversion element module

A photoelectric conversion element, ionization potential technology, applied in electrical components, photovoltaic power generation, electrolytic capacitors, etc., can solve the problems of insufficient stability, difficult stability, and reduced output of photoelectric conversion elements, and achieve excellent photoelectric conversion performance, excellent stability sexual effect

Pending Publication Date: 2020-11-27
RICOH KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoelectric conversion element of PTL 1 has problems that its stability over time is insufficient, and it is difficult to obtain both excellent photoelectric conversion performance and stability over time
[0006] In addition, there is a problem that when the photoelectric conversion element is stored in a high-temperature and high-humidity environment, the output of the photoelectric conversion element is significantly reduced

Method used

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  • Photoelectric conversion element and photoelectric conversion element module
  • Photoelectric conversion element and photoelectric conversion element module
  • Photoelectric conversion element and photoelectric conversion element module

Examples

Experimental program
Comparison scheme
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Embodiment approach

[0372] Hereinafter, examples of the photoelectric conversion element of the present disclosure will be described with reference to the drawings. However, the present disclosure is not limited to the following examples. For example, the numbers, positions, shapes, etc. of the following constituent members not described in the embodiments are also included in the scope of the present disclosure.

[0373] figure 1 is a schematic diagram illustrating an example of a photoelectric conversion element of the present disclosure.

[0374] Such as figure 1 As illustrated in , the first electrode 2 is formed on the first substrate 1 , and the hole blocking layer 3 is formed on the first electrode 2 in the photoelectric conversion element 101 . The electron transport layer 4 is formed on the hole blocking layer 3 , and the photosensitive compound 5 is adsorbed on the surface of the electron transport material constituting the electron transport layer 4 . A hole transport layer 6 is fo...

Embodiment 1

[0438]

[0439] First, a dense layer formed of titanium oxide was formed as a hole blocking layer on an ITO-coated glass by reactive sputtering with oxygen, in which the Indium-doped tin oxide (ITO) film and niobium-doped tin oxide (NTO) film form ITO coated glass.

[0440] Subsequently, 3 g of titanium oxide (product name: P90, available from NIPPON AEROSILCO., LTD.), 0.2 g of acetylacetone, and 0.3 g of polyoxyethylene octylphenyl ether (available from Wako Pure Chemical Corporation) was bead milled with 5.5 g of water and 1.0 g of ethanol for 12 hours to produce a titanium oxide dispersion. To the resulting titanium oxide dispersion liquid, 1.2 g of polyethylene glycol (product name: polyethylene glycol 20,000, available from WakoPure Chemical Corporation) was added to produce a paste. The resulting paste was applied (average thickness: 1.5 μm) on the hole blocking layer and dried at 50 degrees Celsius, followed by baking in air at 500 degrees Celsius for 30 minutes, the...

Embodiment 2

[0447] The photoelectric conversion element in Example 2 was produced in the same manner as in Example 1, except that the hole transport material was replaced with a hole transport material represented by the following structural formula (FDT).

[0448] [Chemical 35]

[0449]

[0450] In the structural formula (FDT), Me is methyl.

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Abstract

Provided is a photoelectric conversion element including a first electrode, an electron-transporting layer including a photosensitizing compound, a hole-transporting layer, and a second electrode, wherein the hole-transporting layer includes a p-type semiconductor material and a basic compound, ionization potential of the hole-transporting layer is greater than ionization potential of the p-type semiconductor material, and is less than 1.07 times the ionization potential of the p-type semiconductor material, ionization potential of the photosensitizing compound is greater than the ionization potential of the hole-transporting layer, and an acid dissociation constant (pKa) of the basic compound is 6 or greater but 10 or less.

Description

technical field [0001] The present disclosure relates to a photoelectric conversion element and a photoelectric conversion element module. Background technique [0002] In recent years, solar cells have become increasingly important as an alternative energy source to fossil fuels and as a measure against global warming. In addition, a solar battery cell or a photodiode is a product applying a photoelectric conversion element capable of converting light energy into electrical energy. [0003] Recently, attention has been drawn to photoelectric conversion elements for indoor applications in which they have high power generation performance using low-illuminance light (illuminance: 20 lux or more but 1,000 lux or less) , the low-illuminance light such as light from a light-emitting diode (LED) or a fluorescent lamp, and sunlight (illuminance of direct light: about 100,000 lux). [0004] Therefore, a photoelectric conversion element having high photoelectric conversion perform...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/46H10K99/00
CPCH01G9/2031H01G9/2009Y02E10/549H10K85/633H10K85/6576H10K85/341H10K30/151H10K85/6572H10K30/80H10K85/331H10K85/654H10K2102/103
Inventor 兼为直道堀内保田中裕二田元望井出陵宏
Owner RICOH KK