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Quantum dot ligand exchange method

A ligand exchange, quantum dot technology, applied in the field of quantum dots, can solve problems such as affecting the service life of the device and irreversible damage of the device

Inactive Publication Date: 2020-12-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for ligand exchange of quantum dots, aiming at solving the problem of non-conjugated long-chain molecular ligands with straight carbon-hydrogen chains on the surface of quantum dots as the skeleton, resulting in quantum dots using it as the light-emitting layer material. During the use of light-emitting diodes, the electric field strength is too high for a long time to cause irreversible damage to the device, which affects the service life of the device

Method used

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  • Quantum dot ligand exchange method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] An inorganic ligand quantum dot is prepared according to the following steps:

[0036] Provide 5.0ml of surface-bound oil-soluble ODPA-modified cadmium selenide (4,4'-biphenyl ether dianhydride) quantum dot hexane solution with a concentration of 1mg / ml and 5.0ml of sodium sulfide formamide solution with a concentration of 1mg / ml , and mix the two to obtain a mixed solution.

[0037] The mixture was stirred at room temperature for 20 minutes, so that sodium sulfide was bound to the surface of the quantum dots, and transferred to the formamide solution in the lower layer. After collecting the formamide solution of the quantum dots in the lower layer, acetonitrile was added to remove the free ligands, and the quantum dots bound to the surface of sodium sulfide were collected.

Embodiment 2

[0039] An inorganic ligand quantum dot is prepared according to the following steps:

[0040] Provide 10.0 ml of ODPA-modified cadmium selenide quantum dot hexane solution with a concentration of 5 mg / ml and 10.0 ml of sodium selenide formamide solution with a concentration of 5 mg / ml, and mix them to obtain a mixed solution.

[0041] The mixture was stirred at room temperature for 50 minutes, so that the sodium selenide was bound to the surface of the quantum dots, and transferred to the formamide solution in the lower layer. After collecting the formamide solution of the quantum dots in the lower layer, acetonitrile was added to remove the free ligands, and the quantum dots bound to the surface of sodium selenide were collected.

Embodiment 3

[0043] An inorganic ligand quantum dot is prepared according to the following steps:

[0044] Provide 15.0ml concentration of 10mg / ml ODPA-modified cadmium selenide surface binding oil-soluble organic ligand quantum dot hexane solution and 10.0ml concentration of 1mg / ml sodium telluride formamide solution, mix the two, to obtain a mixture.

[0045] The mixture was stirred at room temperature for 20-50 minutes, so that the sodium telluride was combined on the surface of the quantum dots, and transferred to the formamide solution in the lower layer. After collecting the formamide solution of the quantum dots in the lower layer, acetonitrile was added to remove the free ligands, and the quantum dots bound to the surface of sodium telluride were collected.

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Abstract

The invention provides a quantum dot ligand exchange method which comprises the following steps: dissolving quantum dots of which the surfaces are combined with oil-soluble organic ligands in a non-polar solvent to prepare a quantum dot solution; dissolving an inorganic ligand in a polar solvent to prepare an inorganic ligand solution; mixing the quantum dot solution and the inorganic ligand solution and then evenly mixing so that quantum dots in the quantum dot solution are transferred into the inorganic ligand solution on the lower layer, inorganic ligands in the inorganic ligand solution are combined with the quantum dots, and the quantum dots with the surfaces combined with the inorganic ligands are obtained.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, in particular to a ligand exchange method for quantum dots. Background technique [0002] As the mainstream development direction of a new generation of display technology, quantum dot fluorescent display materials have narrow half-peak width, adjustable fluorescence peak position, high quantum efficiency, excellent chemical stability, and easy to use low-cost and easy-to-operate printing display technology, etc. Several significant advantages. In display technology, the narrower the half-peak width of the light-emitting layer, the larger the color gamut of the picture, and the fuller and more vivid the final color will be. Therefore, the half-peak width of fluorescent materials is considered to be an important criterion for measuring the excellent performance. The half-peak width of quantum dot materials is generally about 60-80meV, which is much lower than that of organic light-emitting ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88H01L51/50
CPCC09K11/025C09K11/883H10K50/115
Inventor 刘文勇钱磊
Owner TCL CORPORATION
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