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5G small base station radio frequency sound wave filter

An acoustic wave filter and small base station technology, applied in the field of filters, can solve the problems of power and size of 5G small base station filters, etc., and achieve the effect of increasing the loadable power and increasing the loadable power.

Pending Publication Date: 2020-12-01
浙江星曜半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The patent does not address the power and size of 5G small base station filters very well

Method used

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  • 5G small base station radio frequency sound wave filter
  • 5G small base station radio frequency sound wave filter
  • 5G small base station radio frequency sound wave filter

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Embodiment 1

[0044] figure 1 The first common resonator proposed by us, the piezoelectric resonator structure includes a resonator substrate 1, a sacrificial layer 2, a protective layer 3, a resonator plate bottom electrode 4, a resonator piezoelectric layer 5, and a resonator plate Upper electrode 6, air reflection cavity 7. Wherein, the resonator substrate 1 provides support for the resonator, and the substrate material is generally a high-resistance material to reduce acoustic energy leakage. The substrate material 1 can generally be sapphire, silicon carbide, single crystal silicon or high-resistance silicon, etc., with a thickness of about tens to hundreds of microns. The sacrificial layer 2 is formed on the resonator substrate 1 and is pre-filled to form the air reflection cavity 7 of the resonator. Its thickness is the depth of the air reflection cavity. The sacrificial layer 2 is usually made of a material that can be easily removed by wet or dry etching. The protective layer 3 ...

Embodiment 2

[0046] figure 2 The second common resonator proposed by us, this piezoelectric resonator structure includes resonator substrate 1, sacrificial layer 2, protective layer 3, resonator plate bottom electrode 4, resonator piezoelectric layer 5, air reflection cavity 7. The resonator crosses the upper electrode 8 . figure 2 The middle resonator adopts a cross-up electrode structure, and the number of electrodes can be determined according to requirements. The size and shape of each electrode are the same, and the distance between the electrodes is also equal. The upper electrode 8 has multiple connection modes: electric connection (when the bottom electrode 4 is connected to the ground), grounding (when the bottom electrode 4 is connected to the electricity), cross electrodes connected to the electricity and grounded in turn. In addition, more importantly, the electrode width of the upper electrode 8 will also affect the frequency of the resonator. The electrode width of the up...

Embodiment 3

[0048] image 3 The third common resonator proposed by us, this piezoelectric resonator structure includes a resonator substrate 1, a resonator plate bottom electrode 4, a resonator piezoelectric layer 5, a resonator plate upper electrode 6, and a low-impedance reflective layer 9. A high-impedance reflective layer 10 . Among them, the part formed alternately by several layers of low-impedance reflective layers 9 and several layers of high-impedance reflective layers 10 is called a specular reflector, marked as 11 . The number of low-impedance reflective layers 9 is generally multiple layers. The first layer is located under the bottom electrode 4 of the resonator plate, and the second and subsequent layers are sequentially placed under the high-impedance reflective layer 10 . The material of the low-impedance reflective layer is usually a material with low acoustic impedance, the most common being silicon dioxide (SiO2). In addition to low acoustic impedance, silicon dioxide...

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Abstract

The invention provides a 5G small base station radio frequency sound wave filter. The 5G small base station radio frequency sound wave filter comprises a resonator substrate (1), a resonator piezoelectric layer (5), a resonator upper electrode and a reflection component. The resonator substrate (1) is arranged at the bottom of the 5G small base station radio frequency sound wave filter. The resistance of the resonator substrate (1) is greater than a set threshold value. The resonator piezoelectric layer (5) is made of a piezoelectric film material. The resonator upper electrode is arranged atthe upper part of the 5G small base station radio frequency sound wave filter. The reflection component is arranged in the middle of the 5G small base station radio frequency sound wave filter. And the resonator piezoelectric layer (5) is arranged at the upper part of the 5G small base station radio frequency sound wave filter. According to the invention, the electrode area of a common resonator is increased by providing a splitting method, and the bearable power of the resonator is improved on the premise of keeping the electrical properties of the resonator unchanged.

Description

technical field [0001] The present invention relates to the technical field of filters, in particular to a 5G small base station radio frequency acoustic wave filter, in particular to a 5G small base station radio frequency acoustic wave filter capable of carrying high power. Background technique [0002] With the rapid development of 5G communication technology, there are increasingly higher requirements for the transmission rate, delay and signal coverage capability of the communication system. Among them, 5G small base stations, as a supplement to macro base stations, can cover areas that cannot be served by macro base stations. area, or to achieve better communication performance within a local area. As one of the most critical components of the base station system, the radio frequency filter divides the communication frequency band (receiving signals in the target frequency band and filtering non-target frequency band signals) on the one hand, and affects the energy att...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/17
CPCH03H9/02047H03H9/02086H03H9/172H03H9/178
Inventor 高安明刘伟姜伟
Owner 浙江星曜半导体有限公司