Etching solution for composite copper film structure
A technology for etching potion and structure, which is used in chemical/electrolytic methods to remove conductive materials, printed circuit manufacturing, printed circuits, etc. problems such as machining accuracy, to achieve the effect of improving machining accuracy
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Embodiment 1
[0031] Embodiment 1 of the present invention is: etching potion, suitable for the etching process of composite copper film structure, composite copper film structure comprises a conductive metal layer made of copper and a resistance layer connected to a surface of the conductive metal layer, and the resistance The layer consists of nickel (Ni), chromium (Cr), tungsten (W), nickel metal compound (Ni-based compound), chromium metal compound (Cr-based compound), tungsten metal compound (W-based compound), nickel-based alloy ( Ni-based alloy), chrome-based alloy (Cr-based alloy), or tungsten-based alloy (W-based alloy), the etching solution includes:
[0032] Solvent, optionally, the solvent is deionized water;
[0033] The first etchant is dissolved in the solvent, the mass volume ratio (w / v) of the first etchant to the solvent is 1:4-1:16; the first etchant is cerium nitrate, At least one of ammonium nitrate and cerium ammonium nitrate;
[0034] The second etchant is dissolved...
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