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Transmission electron microscope high-resolution in-situ temperature difference pressurization chip and preparation method thereof

A transmission electron microscope, high-resolution technology, used in material analysis using wave/particle radiation, circuits, discharge tubes, etc. problems, to achieve the effect of stable structure, rapid heating and cooling, and high resolution

Pending Publication Date: 2020-12-25
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the chip structures that realize the temperature difference function for micron-scale materials include suspension type and bridge type. The bridge type is to place the sample between two heating wires, and the two ends are used for heating and temperature measurement respectively. In this situation, the cantilever beam is easily damaged; although the suspension structure has high precision and can measure materials with a size of tens of nanometers, there is no hollow structure between the two heating units, the heat insulation effect is not ideal, and there may be a certain temperature error , and the heating and temperature determination of the sample require two different circuits to achieve
In order to realize the function of temperature difference and pressurization at the same time, the current chip structure still needs to be improved in terms of accuracy and stability

Method used

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  • Transmission electron microscope high-resolution in-situ temperature difference pressurization chip and preparation method thereof
  • Transmission electron microscope high-resolution in-situ temperature difference pressurization chip and preparation method thereof
  • Transmission electron microscope high-resolution in-situ temperature difference pressurization chip and preparation method thereof

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Embodiment 1

[0034] Such as Figure 1-Figure 4 As shown, this embodiment provides a high-resolution in-situ temperature difference pressurization chip for transmission electron microscopy, which includes a substrate 1 covered with an insulating layer 10 on the front and back of the substrate 1 . Wherein, the substrate in this embodiment is a silicon substrate, and the insulating layer is a silicon nitride or silicon oxide insulating layer.

[0035] Two heating and pressing units 11 arranged as left and right mirror images are arranged on the front surface of the substrate 1 . Each heating and pressing unit 11 includes two heating electrodes 111, a pressing electrode 112, an arc-shaped heating wire 113 and a pressing circuit 114, wherein the two heating electrodes 111 and a pressing electrode 112 are distributed on the substrate The edge of the same side; the arc-shaped heating wire 113 and the pressure circuit 114 are arranged in the middle of the substrate 1, and form a heating and press...

Embodiment 2

[0049] This embodiment provides a method for preparing a high-resolution in-situ temperature difference pressurized chip under a transmission electron microscope, which includes the following steps:

[0050] S1. prepare Si(100) wafer A with silicon nitride or silicon oxide insulating layer on the front and back, the thickness of the insulating layer is 5-200nm, silicon nitride or silicon oxide insulation on the front and back of wafer A layer can be achieved by means of low pressure chemical vapor deposition;

[0051] S2. Through the photolithography process, the pattern of the heating electrode, the pressing electrode, the heating wire, the pressing circuit, the heating line connecting the heating wire and the heating electrode, and the pressing line connecting the pressing circuit and the pressing electrode are obtained from the photolithography mask. The stencil is transferred to the front side of the above-mentioned wafer A, and then developed in a positive resist developi...

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Abstract

The invention relates to a transmission electron microscope high-resolution in-situ temperature difference pressurization chip and a preparation method thereof. The chip comprises a substrate with twosides covered with insulating layers, two heating pressurization units which are arranged in a left-right mirror image manner are arranged on the front side of the substrate, each heating pressurization unit comprises two heating electrodes, a pressurizing electrode, a heating wire and a pressurizing circuit, the heating wires and the pressurizing circuits are arranged in the middle of the substrate to form a heating and pressurizing area, a gap is formed between the heating and pressurizing areas of the two heating pressurization units, the heating wires are connected with the two heating electrodes through two heating lines correspondingly, the pressurizing circuits are connected with the pressurizing electrode through pressurizing lines, other areas, except for the areas used for supporting the heating pressurization units, the two heating lines and the pressurizing circuits, are arranged in a hollowed-out mode on the substrate, and the chip can achieve the temperature difference pressurization function at the same time.

Description

technical field [0001] The invention relates to the field of in-situ characterization, in particular to a transmission electron microscope high-resolution in-situ temperature difference pressure chip and a preparation method thereof. Background technique [0002] In situ transmission electron microscopy is widely used in various scientific fields due to its advantages of ultra-high spatial resolution (atomic level) and ultra-fast time resolution (millisecond level), which provides researchers with the opportunity to explore the microstructure of new materials. New ideas and research methods. The main performance is to build a visual window in the electron microscope, introduce external field effects such as thermal field, light field, electrochemical field, etc., and perform real-time dynamic in-situ testing on the sample. Researchers can use in-situ testing technology to capture the dynamic response of samples to the environment, including important information such as siz...

Claims

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Application Information

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IPC IPC(8): G01N23/20033G01N23/20041H01J37/20H01J37/26
CPCG01N23/20033G01N23/20041H01J37/20H01J37/261
Inventor 廖洪钢何娜娜江友红
Owner XIAMEN UNIV