Semiconductor film controllable growth system based on supercritical fluid pulse

Abstract

The invention discloses a semiconductor film controllable growth system based on supercritical fluid pulses, and belongs to the field of semiconductor film preparation. The semiconductor film controllable growth system comprises a supercritical CO2 generation module, a precursor dissolution module, a reaction deposition chamber, a reaction gas supply module, a waste gas recovery tank, a six-way valve and a control module; the supercritical CO2 generation module is connected to the precursor dissolution module so as to realize dissolution of a precursor in supercritical CO2; the supercritical CO2 generation module and the precursor dissolution module are connected to the reaction deposition chamber through the six-way valve; the reaction deposition chamber is also connected to the reactiongas supply module, the waste gas recovery tank and the control module respectively; the control module adjusts the temperature, the pressure and the flow velocity of the reaction deposition chamber; and the six-way valve can accurately control the consumption of the supercritical CO2 and the precursor-containing supercritical CO2 so as to perform controllable growth of the film.

Description

technical field [0001] The invention relates to the field of semiconductor thin film preparation, in particular to a precisely regulated chemical fluid deposition system. Background technique [0002] The carrier free path in the semiconductor film is long, the mobility is large, and a high-quality p-n junction can be made by diffusion doping, so the semiconductor film is widely used in the field of microelectronics industry. Chemical vapor deposition (CVD) is a common method for preparing semiconductor thin film materials. It has the advantages of fast deposition speed and relatively mature technology. A variety of reactants are placed in the reaction chamber at the same time, causing part of the precursor mixture to react before reaching the substrate; second, the volatility of the metal precursor is low, and it needs to be carried to the deposition chamber by the carrier gas, so the precursor is in the deposition chamber. The middle concentration is low; the third is tha...

AI Technical Summary

Problems solved by technology

Chemical vapor deposition (CVD) is a common method for preparing semiconductor thin film materials. It has the advantages of fast deposition speed and relatively mature technology. A variety of reactants are placed in the reaction chamber at the same time, causing part of the precursor mixture to react before reaching the substrate; second, the volatility of the metal precursor is low, and it needs to be carried to the deposition chamber by the carrier gas, so the precursor is in the deposition chamber. The middle concentration is low; the third is that the deposition process is mainly controlled by gas transport, and it is difficult to achieve "precise" control of film growth; atomic layer deposition (ALD) alternately pulses the precursor into the reactor to make it on the surface of the substrate Chemical adsorption and gas-solid surface chemical reaction occur, the reaction is self-limiting, and the thickness of the film can be precisely controlled. The deposition temperature is lower than that of CVD and the temperature window is wider. However, the deposition rate is too slow to be mass-produced, and the precursor selection has great limitations

Images