A controllable growth system of semiconductor thin film based on supercritical fluid pulse

Abstract

The invention discloses a semiconductor thin film controllable growth system based on supercritical fluid pulses, belonging to the field of semiconductor thin film preparation. The semiconductor film controllable growth system includes supercritical CO 2 Production module, precursor dissolution module, reaction deposition chamber, reaction gas supply module, waste gas recovery tank, six-way valve and control module; the supercritical CO 2 The generation module is connected to the precursor dissolution module to realize the precursor in supercritical CO 2 dissolved in supercritical CO 2 Both the production module and the precursor dissolution module are connected to the reaction deposition chamber through a six-way valve; the reaction deposition chamber is also connected to the reaction gas supply module, the exhaust gas recovery tank, and the control module; the control module controls the temperature, pressure and flow rate of the reaction deposition chamber. regulation; the six-way valve can precisely control the supercritical CO 2 , containing precursor supercritical CO 2 The amount of the film can be controlled to grow.

Description

Technical field [0001] The present invention relates to the field of semiconductor thin film preparation, and more particularly to a chemical fluid deposition system that can be accurately regulated. Background technique [0002] The freedom of carriers in the semiconductor film, large mobility, high-quality P-N knot, so the semiconductor film has extensive application in the microelectronic industry. Chemical vapor deposition (CVD) is a common method of preparing semiconductor film materials, has advantages of fast deposition speed and maturation, but there is still not enough, one is that the reaction temperature is high, and the substrate is limited, and two or two or A variety of reactants are simultaneously placed in the reaction chamber, causing a portion of the precursor mixture to react before the substrate is not reached; the second, the metal precursor is low, and it is necessary to carry to the deposition chamber by means of the carrier gas, so the precursor is in the ...

AI Technical Summary

Problems solved by technology

Chemical vapor deposition (CVD) is a common method for preparing semiconductor thin film materials. It has the advantages of fast deposition speed and relatively mature technology. A variety of reactants are placed in the reaction chamber at the same time, causing part of the precursor mixture to react before reaching the substrate; second, the volatility of the metal precursor is low, and it needs to be carried to the deposition chamber by the carrier gas, so the precursor is in the deposition chamber. The middle concentration is low; the third is that the deposition process is mainly controlled by gas transport, and it is difficult to achieve "precise" control of film growth; atomic layer deposition (ALD) alternately pulses the precursor into the reactor to make it on the surface of the substrate Chemical adsorption and gas-solid surface chemical reaction occur, the reaction is self-limiting, and the thickness of the film can be precisely controlled. The deposition temperature is lower than that of CVD and the temperature window is wider. However, the deposition rate is too slow to be mass-produced, and the precursor selection has great limitations

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