Manufacturing method of gallium arsenide-based semiconductor device

Abstract

The invention provides a method for manufacturing a gallium arsenide-based semiconductor device, and relates to the technical field of semiconductor device preparation. The manufacturing method of the gallium arsenide-based semiconductor device provided by the present invention comprises: putting the gallium arsenide substrate into an acid solution for cleaning; passing flowing ammonia gas into the surface of the cleaned gallium arsenide substrate, and making the ammonia gas undergo plasma reaction to remove the oxide on the surface of the gallium arsenide substrate; prepare a silicon nitride protective film on the gallium arsenide substrate. In the method for manufacturing gallium arsenide-based semiconductor devices provided by the present invention, before preparing a silicon nitride protective film on the gallium arsenide substrate, the oxide on the surface of the gallium arsenide substrate is removed by using the plasma reaction of ammonia gas, and the silicon nitride protective film is formed on the gallium arsenide substrate A complete nitrogen-hydrogen chemical bond is formed on the surface, so that a stable gallium arsenide substrate with a rough surface can be obtained, so that the silicon nitride protective film prepared on the gallium arsenide substrate is not easy to fall off, and the product yield rate is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a method for manufacturing a gallium arsenide-based semiconductor device. Background technique [0002] In the process of manufacturing gallium arsenide-based semiconductor devices, it is necessary to first put the gallium arsenide substrate into a hydrochloric acid solution for cleaning, then dry the gallium arsenide substrate, and then use PECVD (Plasma Enhanced Chemical Vapor Deposition, Plasma Enhanced Chemical Vaper Deposition, Abbreviated as PECVD) equipment to prepare silicon nitride protective film on the baked gallium arsenide substrate. [0003] However, since arsenic and gallium are very easy to oxidize quickly in the natural state, and after hydrochloric acid treatment, the gallium arsenide substrate is exposed to the air for 5-10 minutes between drying and growing the silicon nitride protective film, so Before the silicon nitride protective ...

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Problems solved by technology

[0003] However, since arsenic and gallium are very easy to oxidize quickly in the natural state, and after hydrochloric acid treatment, the gallium arsenide substrate is exposed to the air for 5-10 minutes between drying and growing the silicon nitride protective film, so Before the silicon nitride protective film is prepared on the gallium arsenide substrate, oxides are easily formed on the gallium arsenide substrate. The silicon nitride protective film prepared on the gallium arsenide substrate is easy to fall off, reducing the product yield

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