Combined growth system with multiple epitaxial reaction chambers, operation method, equipment, manufactured chip and application thereof
An operation method and reaction chamber technology, applied in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc., can solve the problems of increased time cost, non-compliance, capacity matching, etc., to reduce equipment and time, design Reasonable and convenient, with wide application prospects
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[0057] The first MOCVD machine for producing GaN epitaxial wafers and the second MOCVD machine for producing ZnO thin films are used, and the growth time of GaN epitaxial growth is set to 6h, and the growth time of ZnO thin film is set to 2.5h (=preheating time length 0.5h+actual The growth time is 2h), then the number of GaN reaction chambers is 6 / 2.5=2.4, take 3, and the number of ZnO reaction chambers is 1, connected to production, such as figure 2 shown.
[0058] The epitaxial joint growth process of this embodiment is:
[0059] 1) Put the graphite disk 11 with the substrate 10 into the sample delivery inlet 4, close the external entrance of the sample delivery inlet 4, open the interface with the transfer box 8, and the transmission arm 9 sends the graphite disk 11 with the substrate 10 to the The transmission box 8, the interface between the sample delivery inlet 4 and the transmission box 8 is closed, the transmission box 8 starts to extract air to create a vacuum env...
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