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Preparation method of polytetrafluoroethylene-based microwave composite dielectric material substrate with high peeling strength

A technology based on polytetrafluoroethylene and composite media, which is applied in the fields of printed circuit manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve problems such as poor electronic interconnection applications, and achieve convenient continuous operation, strong operability, The effect of simple process

Active Publication Date: 2021-02-09
CHINA ELECTRONICS TECH GRP NO 46 RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is catastrophically bad for electronic interconnection applications

Method used

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  • Preparation method of polytetrafluoroethylene-based microwave composite dielectric material substrate with high peeling strength

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Embodiment

[0007] A method for preparing a polytetrafluoroethylene-based microwave composite dielectric material substrate with high peel strength for microwave communication, the method comprising the following steps:

[0008] (1) Surface modification: Put ceramic powder filler in the mixing tank, weigh 0.5% silane coupling agent into the mixing tank, stir and mix for 30 minutes to make the mixture uniform, after the stirring is completed, the modified Collect the ceramic powder, put it in an oven for 8h drying at 90°C, and then grind and sieve to obtain the modified ceramic powder;

[0009] (2) Material mixing: Add 45wt% of modified ceramic powder and 55wt% of PTFE emulsion (converted according to solid content) into the stirring tank, and fully mix for 2 hours to make the components uniform;

[0010] (3) Additive mixing: Add 12wt% mixture of isopropanol, propanol and butanol into the stirring tank, and continue mixing for 1 hour to make the materials evenly mixed and form a preform wi...

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Abstract

The invention discloses a preparation method of a PTFE-based microwave composite dielectric material substrate with high peeling strength, which comprises the following steps: modifying a filler by adopting a surface modification method to increase the binding force between the filler and PTFE, calendering the material into a sheet by a calendering process, and uniformly coating a sodium-naphthalene complex surface modifier on the calendered sheet, so that the bonding performance of the composite material and the copper foil can be improved, and then the PTFE-based composite material and the copper foil are sintered together through hot pressed sintering. The method has the technical effects that the non-stick characteristic of the composite material is effectively improved, the binding force between the rolled sheet of the composite material and the copper foil is improved, and the anti-stripping strength is successfully improved to 3.9 N / mm or above. The substrate with anti-strippingstrength is beneficial to the reliability of the through hole in the material processing process, effectively avoids the situation that the copper strip is layered and even falls off in the through hole process, meets the requirement of precise processing of complex patterns, is simple and convenient in process and high in operability, and facilitates continuous operation on a production line.

Description

technical field [0001] The invention relates to a method for preparing a microwave composite dielectric substrate, in particular to a method for preparing a polytetrafluoroethylene-based microwave composite dielectric substrate with high peel strength. Background technique [0002] With the vigorous development of high-functional electronic products, the research and development of high-performance substrate materials came into being. In addition to the special assembly process that requires the chip to be flip-packed on the substrate, there are also requirements such as the precise positioning of complex graphics on large-area multi-layer PCBs. These application fields have put forward extremely high requirements for the reliability of through holes. With the rapid development of radio communication technology, the frequency of use of high-frequency signal transmission and processing equipment has developed from 3G, 4G to 5G. Processing performance and so on put forward ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/00
CPCH05K3/0011H05K3/00H05K2203/068Y02P20/10
Inventor 金霞赖占平武聪王丽婧贾倩倩张立欣李强乔韵豪孙伟
Owner CHINA ELECTRONICS TECH GRP NO 46 RES INST
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