Ultrahigh multiplication type organic photoelectric detector and preparation method thereof
A photodetector, an organic technology, applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve the problem of low EQE and achieve the effect of low-cost and sensitive detection
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[0046] The present invention also provides a method for preparing an ultra-high multiplier organic photodetector, see figure 2 As shown, the method includes the following steps:
[0047] Step S210 , setting a transparent conductive anode 2 on the transparent substrate 1 .
[0048] For example, indium tin oxide is sputtered on the transparent substrate 1, then soaked in deionized water and absolute ethanol respectively, and then cleaned with an ultrasonic cleaner; after cleaning, it is dried with nitrogen gas, and then treated with a plasma cleaner for 1 min.
[0049] Step S220 , setting an anode modification layer 3 on the conductive anode 2 .
[0050] For example, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS) is spin-coated on the conductive anode 2 .
[0051] In one embodiment, the spin-coating rate is 2000r / min (rev / min), the spin-coating time is 35s, and the consumption of poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS) is ...
Embodiment 1
[0060] see figure 1 As shown, the prepared ultrahigh-magnification organic photodetector includes a transparent substrate 1 , a transparent conductive anode 2 , an anode modification layer 3 , an active layer 4 and a metal cathode 5 .
[0061] In this embodiment, the substrate 1 is glass; the electrode 2 is ITO; the anode modification layer 3 is PEDOT:PSS; the active layer 4 is P3HT:PC with a weight ratio of 100:1:0.0002 71 BM: 2,2′-(octafluoronaphthalene-2,6-diylidene) bismalononitrile mixed film, the thickness of the active layer 4 is 500nm; the metal cathode 5 is an aluminum (Al) electrode, the thickness is 100nm.
[0062] For the ultra-high multiplication type organic photodetector of this embodiment, its preparation method comprises the following steps:
[0063] Step S310, preparing conductive anode ITO on the glass substrate, then soaking in deionized water and absolute ethanol respectively, and cleaning with an ultrasonic cleaner; after cleaning, blow dry with nitrogen...
Embodiment 2
[0070] On the basis of Embodiment 1, in this embodiment, the metal cathode 5 in Embodiment 1 is changed to silver, and other parameters remain unchanged.
[0071] Figure 5 The dark current and photocurrent curves of the photodetector of this embodiment are shown, wherein, under a bias voltage of -10 volts, the dark current density is 0.45 mA / cm2, and the photocurrent density is 4.11 mA / cm2.
[0072] Image 6 The EQE of the photodetector of this embodiment at different wavelengths is shown, wherein, under the bias voltage of -10 volts, the response waveband of the photodetector is 300nm~900nm, and the EQE shows a maximum value of 51768% at 380nm and 51768% at 645nm A peak occurs at 26054%.
[0073] In summary, the ultra-high multiplier organic photodetector provided by the embodiment of the present invention is composed of a transparent substrate, a transparent conductive anode, an anode modification layer, an active layer, and a metal cathode that are sequentially stacked, ...
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Abstract
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