A kind of preparation method of diamond with optical anti-reflection coating
An optical anti-reflection coating and diamond technology, applied in optics, optical components, gaseous chemical plating, etc., can solve problems such as difficulties, achieve high-efficiency preparation, improve molding quality and surface quality, and reduce mechanical impact.
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Embodiment 1
[0039]1) Single crystal silicon is used as the original substrate, the size of the original substrate is 10×10mm, and the thickness is 1mm. First, the substrate was cleaned, ultrasonically cleaned with acetone for 5 minutes, then transferred to alcohol for 10 minutes, and then dried with a hair dryer for later use, such as Figure 1a shown;
[0040] 2) The anti-reflection coating is plated by radio frequency sputtering. According to the short-wave infrared (wavelength 800-1500nm) anti-reflection requirements, the anti-reflection coating chooses Si 3 N 4 Material, the target film thickness is 125nm;
[0041] 3) After the original substrate is placed in the sputtering equipment, it is first vacuumed to 9×10 -4 Below Pa, heat the deposition table again, the heating temperature is 100°C, when it is heated to the corresponding temperature, the RF power supply voltage is 400V to remove oxygen; then the bias voltage: -800V, duty cycle: 30%, frequency: 45H Z Clean the substrate fo...
Embodiment 2
[0050] 1) Single crystal silicon is used as the original substrate, the size of the original substrate is 10×10mm, and the thickness is 1mm. First, the substrate was cleaned, ultrasonically cleaned with acetone for 5 minutes, then transferred to alcohol for 10 minutes, and then dried with a hair dryer for later use, such as Figure 1a shown;
[0051] 2) The anti-reflection coating is plated by radio frequency sputtering. According to the short-wave infrared (wavelength 800-1500nm) anti-reflection requirements, the anti-reflection coating chooses SiO 2 Material, the target film thickness is 160nm;
[0052] 3) After the original substrate is placed in the magnetron sputtering equipment, it is first vacuumed to 9×10 -4 Below Pa, heat the deposition table again, the heating temperature is 100°C, when the heating reaches the corresponding temperature, the RF power supply voltage is 400V for oxygen removal treatment; then bias voltage: -800V, duty cycle: 30%, frequency: 45H Z Cle...
Embodiment 3
[0061] 1) Metal Mo is used as the original substrate, the size of the original substrate is 10×10mm, and the thickness is 2mm. Firstly, polish the original substrate until the roughness is lower than 2nm; then clean it, use acetone to ultrasonically clean it for 5 minutes, then transfer it to alcohol for 10 minutes, and then dry it with a hair dryer for later use, such as Figure 1a shown;
[0062] 2) The anti-reflection coating is plated by magnetron sputtering. According to the anti-reflection requirements of long-wave infrared (wavelength 8-12μm), the anti-reflection coating is Y 2 o 3 Material, the target film thickness is 1100nm;
[0063] 3) After the original substrate is placed in the magnetron sputtering equipment, it is first vacuumed to 9×10 -4 Below Pa, heat the deposition table again, the heating temperature is 100°C, when heated to the corresponding temperature, the power supply voltage is 400V for oxygen removal treatment; then bias voltage: -800V, duty cycle:...
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