Semiconductor device and preparation method thereof

Abstract

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device sequentially comprises a substrate; a multilayer semiconductor layer and a P-type epitaxial layer; an anode which is positioned on one side, far away from the multilayer semiconductor layer, of the P-type epitaxial layer; and a cathode which is positioned on one side, far away from the substrate, of the multilayer semiconductor layer, wherein the vertical projection of the anode on the substrate is at least partially overlapped with the vertical projection of the P-type epitaxial layer onthe substrate. By adopting the technical scheme, the P-type epitaxial layer is additionally arranged in the semiconductor device, and the two-dimensional electron gas below the anode is exhausted by lifting the energy band through the P-type epitaxial layer, so that the device electric leakage of the semiconductor device is reduced; on the other hand, the semiconductor device does not need to etchmultiple semiconductor layers to form an anode groove, etching damage does not exist, and the interface state of a traditional anode groove structure is avoided; compared with an anode groove etchingprocess, the uniformity of the P-type epitaxial layer is better, and the consistency of forward turn-on voltage of the device can be improved.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of microelectronics, and in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Gallium nitride, a semiconductor material, has become a current research hotspot due to its characteristics of large band gap, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. In terms of electronic devices, gallium nitride materials are more suitable for manufacturing high-temperature, high-frequency, high-voltage and high-power devices than silicon and gallium arsenide, so gallium nitride-based electronic devices have good application prospects. Gallium nitride Schottky diode has the advantages of high speed and low power consumption, so it will be used as the next generation of low power consumption device, and its research is of great significance. [0003] The method of realizing high-voltage Ga...

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Problems solved by technology

[0005] In view of this, the embodiment of the present invention provides a semiconductor device and its preparation method, which solves the technical problems of large device leakage, poor reliability and poor consistency of turn-on voltage caused by the anode groove in the prior art

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