Silicon carbide preparation process with efficient impurity removal function
A preparation process, silicon carbide technology, applied in the direction of silicon carbide, carbide, etc., can solve the problems of low drying efficiency, poor impurity removal effect, inability to achieve, and achieve high drying efficiency, good impurity removal effect, and thorough cleaning. Effect
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[0045] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0046] see Figure 1-11 , the embodiment of the present invention provides a technical solution: a silicon carbide preparation process with high-efficiency impurity removal function, which specifically includes the following steps:
[0047] S1. First mix quartz sand and coke, use the silicon dioxide and petroleum coke, add salt and sawdust, put it in an electric furnace, heat it to 1800-2200°C, and react for 5-10 hours to obtain silicon carbide raw material; ...
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