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A kind of silicon wafer for perc single crystal cell and its annealing method and application

A technology of silicon wafers and single crystals, applied in the field of solar cells, can solve problems such as the influence of the annealing process on the hydrophilicity of silicon wafers, etc., to reduce the appearance of small white spots, remove residual impurities, and improve hydrophilicity sexual effect

Active Publication Date: 2022-07-26
JIANGSU DONGCI NEW ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the invention also does not mention the influence of the annealing process on the hydrophilicity of the silicon wafer, and there is still a large room for improvement

Method used

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  • A kind of silicon wafer for perc single crystal cell and its annealing method and application
  • A kind of silicon wafer for perc single crystal cell and its annealing method and application
  • A kind of silicon wafer for perc single crystal cell and its annealing method and application

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Experimental program
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Effect test

Embodiment 1

[0060] This embodiment provides a method for annealing a silicon wafer for a PERC single crystal cell and a silicon wafer for a PERC single crystal cell, and the annealing method includes the following steps:

[0061] (1) Put the silicon wafer into a quartz boat, push it into the furnace tube of the annealing furnace, keep the absolute pressure in the furnace tube at 1000 mbar, and introduce nitrogen with a flow rate of 3000 sccm for purging, and at the same time, an additional nitrogen with a flow rate of 500 sccm is introduced, Make the nitrogen flow rate stable;

[0062] (2) Evacuate until the absolute pressure in the furnace tube is 100mbar, and pass nitrogen with a flow rate of 200sccm to purge for 190s to remove the waste gas around the silicon wafer in the furnace tube;

[0063] (3) Keep the absolute pressure in the furnace tube at 700mbar, and purge nitrogen with a flow rate of 15000sccm for 290s to remove the residual impurities on the surface of the silicon wafer in ...

Embodiment 2

[0071] This embodiment provides a method for annealing a silicon wafer for a PERC single crystal cell and a silicon wafer for a PERC single crystal cell, and the annealing method includes the following steps:

[0072] (1) Put the silicon wafer into the quartz boat, push it into the furnace tube of the annealing furnace, keep the absolute pressure in the furnace tube at 800 mbar, and introduce nitrogen with a flow rate of 2500 sccm for purging, and at the same time, the nitrogen with a flow rate of 450 sccm is additionally introduced, Make the nitrogen flow rate stable;

[0073] (2) Evacuate until the absolute pressure in the furnace tube is 80mbar, and pass nitrogen with a flow rate of 150sccm to purge for 180s to remove the waste gas around the silicon wafer in the furnace tube;

[0074] (3) Keep the absolute pressure in the furnace tube at 650mbar, and purge nitrogen with a flow rate of 14000sccm for 280s to remove the residual impurities on the surface of the silicon wafer ...

Embodiment 3

[0082] This embodiment provides a method for annealing a silicon wafer for a PERC single crystal cell and a silicon wafer for a PERC single crystal cell, and the annealing method includes the following steps:

[0083] (1) Put the silicon wafer into a quartz boat, push it into the furnace tube of the annealing furnace, keep the absolute pressure in the furnace tube at 1200 mbar, and pass nitrogen with a flow rate of 3500 sccm for purging, and at the same time additionally pass nitrogen with a flow rate of 550 sccm, Make the nitrogen flow rate stable;

[0084] (2) Evacuate until the absolute pressure in the furnace tube is 120mbar, and pass nitrogen with a flow rate of 250sccm to purge for 200s to remove the waste gas around the silicon wafer in the furnace tube;

[0085] (3) Keep the absolute pressure in the furnace tube at 750mbar, and purge nitrogen with a flow rate of 16000sccm for 300s to remove the residual impurities on the surface of the silicon wafer in the furnace tube...

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Abstract

The present invention provides an annealing method for a silicon wafer for a PERC single crystal cell, and a silicon wafer for a PERC single crystal cell and application thereof. The annealing method includes the following steps: (1) feeding the silicon wafer under a first absolute pressure, and passing the Purge with nitrogen; (2) evacuate to the second absolute pressure, and purge with nitrogen; (3) maintain the third absolute pressure, and purge with nitrogen; (4) maintain the fourth absolute pressure, stop the flow Enter nitrogen to carry out leak detection; (5) keep the fifth absolute pressure, feed oxygen for oxidation, and simultaneously feed nitrogen for purging; (6) take out the silicon wafer under the sixth absolute pressure, and feed into nitrogen for purging; wherein, step (1) to step (6) are all carried out at a constant temperature of 660-700°C. The annealing method improves the hydrophilicity of the silicon wafer for the PERC single crystal cell, effectively removes the residual impurities on the surface of the silicon wafer, and reduces the appearance of small white spots.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a silicon wafer for a PERC single crystal cell, in particular to a method for annealing a silicon wafer for a PERC single crystal cell, a silicon wafer for a PERC single crystal cell and its application. Background technique [0002] PERC (Passivated Emitter and Rear Cell), that is, passivated emitter and back cell technology, single crystal cells prepared by this technology are called PERC single crystal cells. PERC technology originated in the 1980s, and the conversion efficiency can be improved by stacking a passivation layer on the backside of conventional cells. The process flow of preparing PERC single crystal cells is divided into the following steps: texturing→diffusion→SE laser→oxidation→etching (PSG removal)→annealing→back film→positive film→back film laser grooving→screen printing→sintering→ Optical injection or electrical injection → test sorting. [0003] In the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1864H01L31/1868H01L31/1804H01L31/0682Y02P70/50
Inventor 方超炎何悦任勇张逸凡
Owner JIANGSU DONGCI NEW ENERGY TECH CO LTD