Epitaxial structure of blue light tunnel junction nano-ring optical amplifier and preparation method of amplifier

Abstract

The invention discloses an epitaxial structure of a blue light tunnel junction nanoring optical amplifier and a preparation method of the amplifier. The epitaxial structure comprises a substrate layer, a buffer layer, a bottom GaN homojunction distributed Bragg reflector layer, a lower barrier layer, an active layer, a tunnel junction layer, a current injection layer, an upper barrier layer, a topGaN homojunction distributed Bragg reflector layer and an ohmic contact layer. The buffer layer, the bottom GaN homojunction distributed Bragg reflector layer, the lower barrier layer, the active layer, the tunnel junction layer, the current injection layer, the upper barrier layer, the top GaN homojunction distributed Bragg reflector layer and the ohmic contact layer are sequentially grown on the substrate layer. According to the invention, the etching defect of the existing nanoring optical amplifier can be improved, so that the high-quality blue light tunnel junction nanoring optical amplifier can be obtained, the method is easy to control, and the process is stable.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and more specifically relates to a blue light tunnel junction nano-ring light amplifier epitaxial structure and a preparation method of the amplifier. Background technique [0002] Low-dimensional structures such as semiconductor nanorings are one of the most important research contents in the field of semiconductor physics and semiconductor optoelectronics technology in recent years, and blue light nanoring materials and devices are one of the most advanced research topics in the world. Quantization effects are more significant, such as quantum size effect, quantum interference effect, quantum tunneling effect and Coulomb blocking effect, etc. These effects directly affect various physical properties such as electronic structure, transport and optics, and are found in the new generation of quantum devices. Very attractive application prospects. Theoretical and experimental...

AI Technical Summary

Problems solved by technology

However, the nanorings prepared by ICP technology are easy to introduce etching defects during the ICP process.

At the same time, due to the influence of the precision of lithography equipment, high-precision lithography machines are usually required to prepare nanoscale semiconductor device structures, so it is very difficult to manufacture nanoscale optical amplifiers using current lithography equipment

Images