Preparation method of nano indium oxide with large specific surface area

A nano-indium oxide technology with large specific surface area, applied in chemical instruments and methods, nanotechnology, inorganic chemistry, etc., can solve the problems of complex process and low specific surface area, and achieve increased specific surface area, particle size, loose and porous, The effect of fine particle size

Active Publication Date: 2021-03-26
GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing nano-indium oxide with large specific surface area. The method is low in cost, simple in production process, easy to operate, safe and non-polluting, so as to solve the problem of complex process and general bias in specific surface area of ​​ordinary indium oxide in the prior art. low level problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing nano-indium oxide with a large specific surface area, comprising the steps of:

[0031] S1: Acid dissolution: dissolve metal indium in a dilute acid solution with a concentration of 6mol / L, heat to near boiling, and wait until the metal indium is completely dissolved to obtain a solution with a total concentration of indium ions of 2mol / L;

[0032] S2: Precipitation: Add sodium bicarbonate to the above solution, control the reaction temperature to 60°C, and the reaction time to 30 minutes, and keep stirring at a stirring speed of 50 r / min until the precipitation is complete, and control the pH value of the feed solution to 6.5;

[0033] S3: Transformation: add ammonia water to the above feed liquid, control the pH value of the feed liquid to 9.0, raise the temperature to near boiling at a heating rate of 5°C / min, and then keep warm for 20 min;

[0034] S4: neutralization: adding acetic acid to the above feed liquid, controlling the pH of the feed ...

Embodiment 2

[0038] A method for preparing nano-indium oxide with a large specific surface area, comprising the steps of:

[0039] S1: Acid dissolution: dissolve metal indium in a dilute acid solution with a concentration of 9 mol / L, heat it to near boiling, and wait until the metal indium is completely dissolved to obtain a solution with a total concentration of indium ions of 3 mol / L;

[0040] S2: Precipitation: Add ammonium bicarbonate to the above solution, control the reaction temperature to 70°C, and the reaction time to 40 minutes, and keep stirring at a stirring speed of 80 r / min until the precipitation is complete, and control the pH value of the feed solution to 7.0;

[0041] S3: Transformation: add ammonia water to the above-mentioned feed liquid, control the pH value of the feed liquid to 9.5, heat up to near boiling at a heating rate of 8°C / min, and then keep warm for 30 min;

[0042] S4: Neutralization: Add acetic acid to the above-mentioned feed liquid, and control the pH to...

Embodiment 3

[0046] A method for preparing nano-indium oxide with a large specific surface area, comprising the steps of:

[0047]S1: Acid dissolution: dissolve metal indium in a dilute acid solution with a concentration of 12 mol / L, heat to near boiling, and wait until the metal indium is completely dissolved to obtain a solution with a total concentration of indium ions of 4 mol / L;

[0048] S2: Precipitation: Add potassium bicarbonate to the above solution, control the reaction temperature to 80°C, and the reaction time to 50 minutes, and keep stirring at a stirring speed of 100 r / min until the precipitation is complete, and control the pH value of the feed solution to 7.5;

[0049] S3: Transformation: add ammonia water to the above feed liquid, control the pH value of the feed liquid to 10.0, heat up to near boiling at a heating rate of 10°C / min, and then keep warm for 40 min;

[0050] S4: Neutralization: add acetic acid to the above-mentioned feed liquid, and control the pH to 7.5;

...

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Abstract

The invention relates to a preparation method of nano indium oxide with a large specific surface area. The preparation method comprises the following steps: dissolving metallic indium in a dilute acidsolution, and heating until the metallic indium is completely dissolved to obtain a solution with the total indium ion concentration of 2-4mol/L; adding a precipitant, and controlling the reaction temperature to be 60-80 DEG C and the pH value of the reaction solution to be 6.5-7.5; adding a transforming agent, controlling the pH value of the feed liquid to be 9.0-10.0, heating to be nearly boiling, and keeping the temperature for 20-40 minutes; adding a neutralizer, and controlling the pH value of the feed liquid to be 6.5-7.5; cleaning, filtering and drying; and decomposing, cooling, crushing and screening to obtain the product. The preparation method is wide in raw material source, simple in process, mild in reaction condition, safe and free of pollution, the purity of the prepared nano indium oxide exceeds 99.995%, the particle size is smaller than 70 nm, the specific surface area exceeds 65 m < 2 >/g, the maximum specific surface area reaches 140 m < 2 >/g, and the requirements of higher-performance film coating and higher-sensitivity gas sensitive materials can be met.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for preparing nano-indium oxide with a large specific surface area. Background technique [0002] Indium oxide (In 2 o 3 ) has been used in many aspects of daily life. As a very important functional material, it can be used as the main raw material of transparent conductive indium tin film. This film is used in liquid crystal display, energy-saving glass, solar cells and collectors, vehicles It has important uses in aircraft windshield and other aspects. Moreover, indium oxide can increase the hydrogen evolution potential of zinc and the discharge capacity of the battery, and slow down the hydrogen evolution of the discharged battery, so it is widely used in mercury-free batteries. [0003] In 2 o 3 As a low-resistance n-type semiconductor material, it has a wide band gap, small resistivity and high catalytic activity, and is a good gas-sensing mate...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00B82Y40/00
CPCC01G15/00B82Y40/00C01P2004/64C01P2006/80C01P2006/12
Inventor 王凯黄作郑飞雄张倍维梁盈祥宋春华
Owner GUANGXI CRYSTAL UNION PHOTOELECTRIC MATERIALS CO LTD
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