Growth method of light-emitting diode epitaxial wafer
A technology of light-emitting diodes and growth methods, applied in the field of growth of light-emitting diode epitaxial wafers, can solve the problem of affecting the interface definition of quantum well layer and quantum barrier layer, the segregation effect of quantum well layer, and reducing the interface crystal of quantum well layer and quantum barrier layer Quality and other issues
Active Publication Date: 2021-03-30
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0004] However, the high-temperature growth of the quantum barrier layer will cause the segregation effect of In in the quantum well layer, which will affect the interface clarity between the quantum well layer and the quantum barrier layer, thereby reducing the quality of the interface crystal between the quantum well layer and the quantum barrier layer, thereby affecting Luminous Efficiency of Light Emitting Diodes
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[0033] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0034] figure 1 It is a flow chart of a method for growing a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the growth method includes:
[0035] Step 101, providing a substrate.
[0036] Wherein, the substrate may be a sapphire substrate.
[0037] Step 102 , growing an N-type layer, an active layer and a P-type layer sequentially on the substrate.
[0038] Wherein, the active layer includes a plurality of alternately grown InGaN quantum well layers and GaN quantum barrier layers.
[0039] Exemplarily, in step 102, when growing each layer of the GaN quantum barrier layer of the active layer, hydrogen gas is intermittently fed into the reaction chamber, nit...
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Abstract
The invention provides a growth method of a light emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growth method comprises the following steps: intermittentlyintroducing hydrogen and continuously introducing nitrogen into a reaction cavity when each GaN quantum barrier layer of the active layer grows, controlling the flow of the introduced nitrogen to be increased every time the introduction of the hydrogen is stopped, and controlling the flow of the introduced nitrogen to be reduced every time the hydrogen is introduced; the growth temperature and thefive-three ratio of each GaN quantum barrier layer are changed for multiple times from high to low during growth, the growth rate is gradually increased, then gradually decreased, kept unchanged andthen gradually increased. The growth method can improve the interface crystal quality of the quantum well layer and the quantum barrier layer, thereby improving the light emitting efficiency of the light emitting diode.
Description
technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for growing an epitaxial wafer of a light emitting diode. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, an LED epitaxial wafer includes a substrate and an N-type layer, an active layer and a P-type layer stacked on the substrate in sequence. Wherein, the N-type layer is used to prov...
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IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/007H01L33/06
Inventor 从颖姚振梅劲
Owner HC SEMITEK ZHEJIANG CO LTD