Efficient passivation structure battery and preparation method thereof

A battery and high-efficiency technology, applied in the field of solar cells, can solve the problems of efficiency failure, compactness, and poor thickness uniformity, and achieve the effects of improving efficiency, reducing contact resistance, and improving uniformity

Pending Publication Date: 2021-04-16
CHINT NEW ENERGY TECH (HAINING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the problems of passivation film compactness and poor thickness uniformity, problems such as efficiency failure often occur, and the problems existing at the component end due to the PID effect, and provide a high-efficiency passivation structure battery and its preparation method. The present invention It is planned to increase the efficiency and improve the PID effect on the battery side, and use SiO on the back side 2 + Ga 2 o 3 /AlN/Ta 2 ...

Method used

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  • Efficient passivation structure battery and preparation method thereof
  • Efficient passivation structure battery and preparation method thereof
  • Efficient passivation structure battery and preparation method thereof

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preparation example Construction

[0038] A kind of preparation method of described efficient passivation structure battery, comprises following preparation steps:

[0039] 1) Obtain P-type crystalline silicon and make texture, the resistivity of P-type crystalline silicon is 0.5-1.5Ω·cm;

[0040] 2) Diffusion, laser SE and etching of the P-type crystalline silicon after texturing to obtain a semi-finished product with a clean surface;

[0041] 3) After etching, the semi-finished product is prepared by oxidation method for double-sided silicon dioxide;

[0042] 4), double-sided silicon dioxide wafer source for backside Ga 2 o 3 / AlN / Ta 2 o 5 Preparation of laminated passivation film, the thickness of which is 2-15nm;

[0043] 5) Continue to deposit silicon oxynitride + silicon nitride composite laminated film on the back, wherein silicon nitride is on the top layer;

[0044] 6) Deposit silicon nitride + silicon oxynitride composite laminate film on the front side, in which silicon oxynitride is on the top...

Embodiment 1

[0048] A high-efficiency passivation structure battery, comprising a P-type crystalline silicon 1, two negative electrodes 2 arranged on the front of the P-type crystalline silicon 1, and two positive electrodes 3 arranged on the back of the P-type crystalline silicon 1, the The back side of the P-type crystalline silicon 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with Ga 2 o 3 / AlN / Ta 2 o 5 A passivation film 5 is laminated. The front side of the P-type crystalline silicon 1 is sequentially provided with an N+ layer 8, SiO 2 Layer 4, SiN x Layer 7 and SiO x N y layer 6, the negative electrode 2 goes through the SiO x N y Layer 6, SiN x Layer 7, SiO 2 Layer 4 and N+ layer 8. The contact area between the negative electrode 2 and the P-type crystalline silicon 1 is provided with an N++ layer 9 . The back side of the P-type crystalline silicon 1 is sequentially provided with SiO 2 Layer 4, Ga 2 o 3 / AlN / Ta 2 o 5 Laminated passivation film 5...

Embodiment 2

[0059] A high-efficiency passivation structure battery, comprising a P-type crystalline silicon 1, two negative electrodes 2 arranged on the front of the P-type crystalline silicon 1, and two positive electrodes 3 arranged on the back of the P-type crystalline silicon 1, the The back side of the P-type crystalline silicon 1 is provided with SiO 2 Layer 4, the SiO 2 Layer 4 is provided with Ga 2 o 3 / AlN / Ta 2 o 5 A passivation film 5 is laminated. The front side of the P-type crystalline silicon 1 is sequentially provided with an N+ layer 8, SiO 2 Layer 4, SiN x Layer 7 and SiO x N y layer 6, the negative electrode 2 goes through the SiO x N y Layer 6, SiN x Layer 7, SiO 2Layer 4 and N+ layer 8. The contact area between the negative electrode 2 and the P-type crystalline silicon 1 is provided with an N++ layer 9 . The back side of the P-type crystalline silicon 1 is sequentially provided with SiO 2 Layer 4, Ga 2 o 3 / AlN / Ta 2 o 5 Laminated passivation film 5,...

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Abstract

The invention relates to the technical field of solar batteries, and discloses an efficient passivation structure battery and a preparation method thereof in order to solve the problems of poor compactness and thickness uniformity of a passivation film in the prior art. The efficient passivation structure battery comprises P-type crystalline silicon, two positive electrodes arranged on the front surface of the P-type crystalline silicon and two negative electrodes arranged on the back surface of the P-type crystalline silicon, wherein a SiO2 layer is arranged on the back surface of the P-type crystalline silicon, and a Ga2O3/AlN/Ta2O5 laminated passivation film is arranged on the SiO2 layer. According to the invention, the SiO2+Ga2O3/AlN/Ta2O5 laminated passivation film, silicon oxynitride and the silicon nitride composite passivation film are adopted on the back surface, the efficiency is improved through a battery end, the fixed negative charge density of each layer of the Ga2O3/AlN/Ta2O5 laminated passivation film is different and is lower than that of aluminum oxide, the adverse effect caused by positive charge reduction passivation can be relieved while the passivation effect is ensured through multi-layer superposition, and PID is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a high-efficiency passivation structure cell and a preparation method thereof. Background technique [0002] At present, aluminum oxide is usually used as the passivation layer on the back of PERC cells, and its fixed negative charge density provides an excellent effect for field passivation, so that the cell efficiency can be guaranteed. However, in the actual power generation application process, it is often found that the efficiency of the battery is reduced due to the failure of the passivation film, which in turn affects the power output of the subsequent terminal components. In order to ensure the efficiency of the battery and the stable output of the module power, the battery terminal is currently x Membrane layer design, high density POE material at the module end, low Na + Glass, etc. have been improved, but it still shows problems such as component reliability fai...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18
CPCY02P70/50
Inventor 廖晖马玉超赵迎财赵文祥单伟何胜徐伟智
Owner CHINT NEW ENERGY TECH (HAINING) CO LTD
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