Hall element and preparation method thereof
A Hall element and functional layer technology, applied in the field of sensors, can solve the problems of non-uniform semiconductor materials, Hall element output nonlinearity and zero point imbalance, electrode asymmetry, etc., to improve resolution, reduce processing requirements, and stability Good results
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specific Embodiment approach 1
[0028] Specific implementation mode one: refer to figure 1 , 2 , 5, 6, 7 and 8 specifically illustrate this embodiment, the Hall element described in this embodiment includes a substrate 1, a passivation layer 2 and an octagonal Hall function layer 3, the octagon is opposite to The lengths of the two sides are the same and parallel to each other, the four non-adjacent sides of the Hall function layer 3 are implanted with ohmic contact regions 4 respectively, and the four ohmic contact regions 4 are respectively connected with an electrode 5, and the electrodes 5 pass through the ohmic contact region 4 Connected to the Hall function layer 3, each electrode 5 is provided with an electrical connection terminal, wherein the electrical connection terminals of the two electrodes 5 are used as the voltage input terminals of the Hall element, and the electrical connection terminals of the remaining two electrodes 5 are used as the Hall element voltage output terminal.
[0029] The H...
specific Embodiment approach 2
[0032] Embodiment 2: This embodiment is the preparation method of the Hall element described in Embodiment 1. The method is specifically:
[0033] The substrate 1 is cleaned and thermally oxidized, and the substrate 1 is an SOI silicon wafer or an N-type silicon wafer.
[0034] An octagonal Hall function layer 3 is formed on the substrate 1 by photolithography, etching or ion implantation.
[0035] The doping of the ohmic contact region 4 is respectively realized on the four non-adjacent sides of the Hall function layer 3 by photolithography and ion implantation technology.
[0036] The oxide layer of the electrode connection hole is removed by photolithography and etching process.
[0037] The surface of the Hall function layer 3 and the electrode connection hole is covered with a metal layer by magnetron sputtering and / or thermal evaporation process.
[0038] The metal layer is patterned by photolithography, etching and alloying processes to form leads and electrodes 5 . ...
specific Embodiment approach 3
[0040] Specific implementation mode three: refer to image 3 , 4 , 5, 6, 7 and 8 specifically describe this embodiment, the Hall element described in this embodiment includes: two layer structures,
[0041] Each layer structure includes: a substrate 1 , a passivation layer 2 and an octagonal Hall function layer 3 .
[0042] The opposite sides of the octagon have the same length and are parallel to each other. The four non-adjacent sides of the Hall function layer 3 are respectively implanted with ohmic contact regions 4 , and the electrodes 5 are connected to the Hall function layer 3 through the ohmic contact regions 4 . Each electrode 5 is provided with electrical connection terminals, wherein the electrical connection terminals of two electrodes 5 are used as the voltage input terminals of the Hall element, and the electrical connection terminals of the remaining two electrodes 5 are used as the voltage output terminals of the Hall element; the Hall function The layer 3 i...
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