Tungsten trioxide/activated carbon/silver phosphate composite semiconductor photocatalytic material as well as preparation method and application thereof
A compound semiconductor and photocatalytic material technology, which is applied in the field of tungsten trioxide/activated carbon/silver phosphate compound semiconductor photocatalytic material and its preparation, can solve the problems of poor stability, inability to be recycled multiple times, easy recombination of photogenerated electrons and holes, Reduce photocatalytic activity and other problems, achieve the effect of improving photocatalytic performance, improving photocatalytic efficiency, and high degradation efficiency
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Embodiment 1
[0040] A kind of WO 3 / C / Ag 3 PO 4 The preparation method of composite semiconductor photocatalytic material comprises the following steps:
[0041] (1) Preparation of activated carbon (C): get 10g eucalyptus sawdust, cross a 60 mesh sieve, and mix with 20g mass fraction of 50% H 3 PO 4 The aqueous solution was mixed, immersed for 24 hours, transferred to a muffle furnace, calcined at 600°C for 2 hours, washed with deionized water until neutral, dried at 70°C for 2 hours, ground and passed through an 80-mesh sieve to obtain activated carbon (C);
[0042] (2) Tungsten trioxide (WO 3 ) preparation: take 4g Na 2 WO 4 2H 2 O powder, add 40mL deionized water to dissolve, then add it dropwise to 5mL concentration of 5mol / L HNO 3 solution, mechanically stirred for 30 min, centrifuged to obtain the precipitate, washed once with deionized water and twice with ethanol, then dried at 80°C for 2 h, ground and transferred to a muffle furnace. Calcined at 400°C for 2 hours to obtai...
Embodiment 2
[0055] A kind of WO 3 / C / Ag 3 PO 4 The preparation method of composite semiconductor photocatalytic material comprises the following steps:
[0056] (1) Preparation of activated carbon (C): get 8g of eucalyptus chips crossing 60 mesh sieves, and 8g mass fraction of 50% H 3 PO 4The aqueous solution was mixed, immersed for 30 hours, transferred to a muffle furnace, calcined at 550°C for 3 hours, washed with deionized water until neutral, dried at 60°C for 2.5 hours, ground and passed through a 80-mesh sieve to obtain activated carbon (C);
[0057] (2) Tungsten trioxide (WO 3 ) preparation: take 3.2g Na 2 WO 4 2H 2 O powder, add 35mL deionized water to dissolve, then add it dropwise to 5mL concentration of 5mol / L HNO 3 solution, mechanically stirred for 40 min, centrifuged to obtain the precipitate, washed twice with deionized water and once with ethanol, dried at 90°C for 1.5 h, ground and transferred to a muffle furnace. Calcined at 420°C for 2.5h to obtain tungsten tr...
Embodiment 3
[0061] A kind of WO 3 / C / Ag 3 PO 4 The preparation method of composite semiconductor photocatalytic material comprises the following steps:
[0062] (1) Preparation of activated carbon (C): get 12g eucalyptus sawdust, cross a 60 mesh sieve, and mix with 30g mass fraction of 50% H 3 PO 4 The aqueous solution was mixed, immersed for 36 hours, transferred to a muffle furnace, calcined at 600°C for 2.5 hours, washed with deionized water until neutral, dried at 75°C for 2 hours, ground and passed through a 80-mesh sieve to obtain activated carbon (C);
[0063] (2) Tungsten trioxide (WO 3 ) preparation: take 5g Na 2 WO 4 2H 2 O powder, add 70mL deionized water to dissolve, then add it dropwise to 6mL concentration of 5mol / L HNO 3 solution, mechanically stirred for 50 min, centrifuged to obtain the precipitate, washed three times with deionized water and ethanol once, dried the precipitate at 90°C for 1.5 h, ground and transferred to a muffle furnace. Calcined at 450°C for 3...
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