Welding method for target material and back plates
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KONFOONG MATERIALS INTERNATIONAL CO LTD
- Publication Date
- 2021-05-04
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Figure 1
Abstract
Description
technical field
[0001] The invention belongs to the technical field of target material manufacturing, and in particular relates to a welding method for a target material and a back plate. Background technique
[0002] As the preparation of semiconductor integrated circuit chips develops toward larger dimensions, the size of the sputtering target and the sputtering power also increase accordingly. The requirements for the microstructure of the sputtering target and the connection between the target and the backplane are also getting higher and higher. The connection technology of large-area targets and backplanes has become a key technology in the preparation of target components. In the sputtering process, the target assembly, as the cathode, should first have excellent electrical conductivity. At the same time, in order to discharge the heat generated by high-energy ions bombarding the surface of the target at high speed, the target assembly should also have excellent ther...