Welding method for target material and back plates

A welding method and target material technology, applied in the field of target material manufacturing, can solve problems such as target material deformation
CN112743216APending Publication Date: 2021-05-04KONFOONG MATERIALS INTERNATIONAL CO LTD

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
KONFOONG MATERIALS INTERNATIONAL CO LTD
Publication Date
2021-05-04

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Abstract

The invention provides a welding method for a target material and back plates. The welding method comprises the steps of assembling the target material, middle layers and the back plates to obtain an assembly; enabling the target material to be located between the two middle layers, enabling the two back plates to be symmetrically arranged on the outer sides of the two middle layers, and wrapping the target material and the two middle layers; and carrying out sheath welding, degassing and hot isostatic pressing on the obtained assembly, and then stripping the back plate on one side of the sputtering face of the target material of the assembly and the middle layers to obtain a target material assembly. According to the welding method, through the design of a welding structure, the problem of target material deformation in the welding process is effectively solved, meanwhile, the welding bonding rate and the welding bonding strength are guaranteed, and good industrial application prospects are achieved.
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Description

technical field

[0001] The invention belongs to the technical field of target material manufacturing, and in particular relates to a welding method for a target material and a back plate. Background technique

[0002] As the preparation of semiconductor integrated circuit chips develops toward larger dimensions, the size of the sputtering target and the sputtering power also increase accordingly. The requirements for the microstructure of the sputtering target and the connection between the target and the backplane are also getting higher and higher. The connection technology of large-area targets and backplanes has become a key technology in the preparation of target components. In the sputtering process, the target assembly, as the cathode, should first have excellent electrical conductivity. At the same time, in order to discharge the heat generated by high-energy ions bombarding the surface of the target at high speed, the target assembly should also have excellent ther...

Claims

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