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Cooling device and method for silicon wafer oxygen donor elimination heat treatment process

A heat treatment process and cooling device technology, applied in chemical instruments and methods, post-treatment, post-processing details, etc., can solve problems such as excessive deviation of product resistivity, achieve improved reliability, strong practicability, and suppress oxygen thermal donors the effect of

Inactive Publication Date: 2021-05-04
GRINM SEMICONDUCTOR MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems existing in the prior art, the object of the present invention is to provide a cooling device for the heat treatment process of silicon wafers to eliminate oxygen donors, which can adjust the cooling environment so that the silicon wafers can be cooled quickly and stably after annealing, which is beneficial to It quickly exits the high-generation rate temperature zone of oxygen donors, and can prevent a series of problems such as excessive product resistivity deviation caused by excessive cooling

Method used

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  • Cooling device and method for silicon wafer oxygen donor elimination heat treatment process
  • Cooling device and method for silicon wafer oxygen donor elimination heat treatment process
  • Cooling device and method for silicon wafer oxygen donor elimination heat treatment process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] In this embodiment, the selected axial flow fans have a fixed center diameter of 31 mm and a terminal diameter of 328 mm, and the four axial flow fans used are arranged at an equidistant center interval of 450 mm along the axial direction of the cold water pipe row. The diameter of the cold water pipe used for the cold water pipe row through which the air flow passes is 10mm, and the wall thickness is 0.6mm. The overall width L is 50mm, and the diameter of the water inlet and outlet pipes of the final equipment is 15mm.

[0040] Arrange the silicon wafers with a chip unscrambler, with the reference surface of the silicon wafers facing down; import the silicon wafers into 4 quartz boats with a rewinder, each boat can hold 25 silicon wafers, a total of 100 pieces, repeat the experiment three times, each time Choose a fixed furnace tube to ensure repeatability; execute the Boatin command, enter the horizontal furnace, set the temperature at 650°C, and after the normal anne...

Embodiment 2

[0043] In this embodiment, the selected axial flow fans have a fixed center diameter of 31mm and a terminal diameter of 328mm, and the four axial flow fans used are arranged at an equidistant center interval of 400mm along the axial direction of the cold water pipe row. The diameter of the cold water pipe used for the cold water pipe row through which the air flow passes is 12mm, and the wall thickness is 0.5mm. The overall width L is 50 mm. The diameter of the water inlet and outlet pipes of the final equipment is 18mm. The cooling water inlet temperature is 12°C.

[0044] Arrange the silicon wafers with a chip unscrambler, with the reference surface of the silicon wafers facing down; import the silicon wafers into 4 quartz boats with a rewinder, each boat can hold 25 silicon wafers, a total of 100 pieces, and repeat the experiment under the same furnace tube Three times; Boat in command, enter the horizontal furnace, set the temperature at 650 ° C, after the normal anneali...

Embodiment 3

[0047] In this embodiment, the selected axial flow fans have a fixed center diameter of 31mm and a terminal diameter of 328mm, and the four axial flow fans used are arranged at an equidistant center interval of 400mm along the axial direction of the cold water pipe row. The diameter of the cold water pipe used for the cold water pipe row through which the air flow passes is 10mm, and the wall thickness is 0.4mm. The overall width L is 45 mm. The diameter of the water inlet and outlet pipes of the final equipment is 18mm. The limit speed of the fan is 2800r / min, the power speed is controlled by the system, the temperature of the water inlet pipe is 10°C, and the flow rate is set by the valve controlled by the system.

[0048] Arrange the silicon wafers with a chip unscrambler, with the reference side of the silicon wafers facing down; import the silicon wafers into 4 quartz boats with a rewinder, and each boat can hold 25 silicon wafers, a total of 100 wafers. Repeat the expe...

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Abstract

The invention discloses a cooling device and method for a silicon wafer oxygen donor elimination heat treatment process. The cooling device comprises a cold liquid cooling system which comprises a cold water pipe row composed of a plurality of cold water pipes, a fixing device used for fixing the cold water pipe row, and a water inlet pipe and a water outlet pipe which are connected with the cold water pipe row through corrugated pipes, wherein the fixing device comprises fixing beams used for fixing different parts of the cold water pipe row, ventometers and temperature and humidity sensors being loaded on the fixing beams, and the water inlet pipe and the water outlet pipe are respectively provided with a pressure gauge and a thermometer, and the corrugated pipe are provided with flow meters and valves; a ventilation system which comprises a plurality of axial flow fans and fastening devices used for mechanically fixing the axial flow fans, wherein the axial flow fans are arranged on one side of the cold water pipe row and blow air towards the cold water pipe row; and a control system which is used for intelligently controlling the cooling environment. According to the invention, the silicon wafer can be rapidly and stably cooled after being annealed and taken out of the boat, and the silicon wafer can rapidly exit from a high-generation-rate temperature zone of oxygen donors.

Description

technical field [0001] The invention relates to a cooling device and a method for the heat treatment process of eliminating oxygen donors of silicon wafers, belonging to the technical field of silicon wafer processing. Background technique [0002] Oxygen is the main light element impurity pollution from the quartz crucible during the Czochralski growth process of silicon single crystal, and it occupies the position of lattice gap and is electrically neutral. The oxygen concentration of ordinary Czochralski single crystal silicon is generally 5-7×10 17 cm -3 , when the low temperature is less than 700°C, the solid solubility of oxygen in silicon can be expressed by S=exp[ΔS / R]exp[ΔH / RT], where ΔS is the entropy of dissolution, ΔH is the enthalpy of dissolution, R is the gas constant, and T is the absolute temperature. Due to the phenomenon of segregation, the distribution of oxygen in the Czochralski silicon single crystal rods as a whole presents a distribution with the he...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/02C30B29/06
CPCC30B33/02C30B29/06
Inventor 徐继平宁永铎李钧宏颜俊尧程凤伶边永智钟耕杭赵而敬鲁进军王海涛
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD