16 results about "Oxygen donor" patented technology

The present invention discloses a method for synthesizing vinylene carbonate and its derivatives, comprising: reacting a chain carbonate represented by formula (I), an olefin represented by formula (II) and an oxygen donor in the presence of a palladium catalyst and optionally a metal carbonate to produce a vinylene carbonate and its derivatives represented by formula (III); in formula (I), R1 and R2 are independently selected from alkyl or aryl groups; in formula (II), R3 and R4 are independently selected from hydrogen or alkyl groups; in formula (III), R3 and R4 are the same as described above; this method not only has an ideal yield, especially with few by-products and easy purification, but also avoids the drawbacks of the existing solutions that usually use ethylene chlorocarbonate as an intermediate, etc., and is suitable for large-scale industrial production.

The invention discloses a method for testing the iron metal content of a lightly boron-doped silicon polished wafer, which comprises the following steps: (1) after finishing straight pulling of a lightly boron-doped crystal bar, tumbling and cutting off, and slicing along the crystal orientation (100) through a steel wire; (2) chamfering after slicing to form an R-shaped or T-shaped edge chamfer contour; (3) grinding after chamfering, and carrying out corrosion treatment on the surface after grinding; (4) polishing the slices; (5) cleaning the silicon wafer after polishing treatment; (6) feeding the cleaned silicon polished wafer into an epitaxial furnace for annealing treatment; and (7) testing the iron metal content of the 12-inch silicon polished wafer body. According to the method, the distribution of oxygen donors in the silicon wafer is changed through annealing treatment, so that the originally gathered oxygen donors are diffused, the interference of local high-concentration oxygen donors on the bulk iron metal test is reduced, and the content of the bulk iron metal of the silicon wafer is accurately obtained. The method is simple in technological process and obvious in effect, and has a good application prospect in the field of semiconductors.

This invention provides a trench-type MIM capacitor and its manufacturing method, belonging to the semiconductor field. The trench-type MIM capacitor includes a semiconductor substrate with multiple trenches within a first dielectric layer on the semiconductor substrate; a bottom electrode disposed along the bottom and sides of the multiple trenches and extending laterally along the upper surface of the first dielectric layer; an oxygen donor layer covering only the bottom electrode on the trench sides; and a top electrode disposed on the surface of the high-dielectric-constant dielectric layer and filling the trenches. The high-dielectric-constant dielectric layer isolates the bottom electrode and the top electrode. This invention reduces leakage current by providing an oxygen donor layer only on the bottom electrode layer on the trench sides, allowing the oxygen donor layer to supply oxygen to the bottom electrode layer and reducing the concentration of oxygen vacancies. The absence of an oxygen donor layer in the horizontal portion ensures that the capacitance dielectric constant k does not decrease.

The invention provides a groove type MIM capacitor and a manufacturing method thereof, and belongs to the field of semiconductors. The groove type MIM capacitor comprises a semiconductor substrate, wherein a plurality of grooves are formed in a first dielectric layer on the semiconductor substrate; the bottom electrodes are arranged along the bottoms and the side surfaces of the plurality of grooves and transversely extend along the upper surface of the first dielectric layer; the oxygen donor layer only covers the bottom electrode on the side surface of the trench; and the top electrode is arranged on the surface of the high-dielectric-constant dielectric layer and fills the groove, and the high-dielectric-constant dielectric layer isolates the bottom electrode from the top electrode. The oxygen donor layer is only arranged on the bottom electrode layer on the side face of the groove, the oxygen donor layer can provide oxygen for the bottom electrode layer, the concentration of oxygen vacancies is reduced, and therefore leakage current is reduced. And no oxygen donor layer is arranged at the horizontal part, so that the capacitance dielectric constant k value cannot be reduced.

The invention relates to the technical field of preparation of infrared optical materials, and particularly discloses a large-diameter infrared silicon single crystal as well as an annealing method and application thereof. The annealing method of the large-diameter infrared silicon single crystal is provided by controlling parameters such as temperature, heating rate and cooling rate of different annealing stages under the protective gas atmosphere, and the annealing method can be used for uniformly heating a silicon single crystal rod without increasing the concentration of oxygen donors, so that the quality of the large-diameter infrared silicon single crystal is improved. And the internal stress and lattice defects of the silicon single crystal rod can be effectively reduced. The prepared infrared silicon single crystal has excellent optical transmittance and optical uniformity, the average infrared transmittance within the range of 2-6 microns is larger than or equal to 52.4%, and the optical uniformity is smaller than or equal to 7.5 * 10 <-5 >. The large-diameter infrared silicon single crystal prepared by the method can be applied to preparation of a large-diameter infrared remote sensing detection lens or an infrared optical window and related fields of the large-diameter infrared remote sensing detection lens or the infrared optical window.

A composition for cleaning a combustion engine system. The composition comprises a hydrocarbon. The hydrocarbon comprises respective first and second hydrocarbons. The first hydrocarbon comprises a lubricant, wherein the lubricant has a flash point, measured according to ASTM D93, of less than 80° C. The second hydrocarbon comprises an aromatic hydrocarbon, wherein the aromatic hydrocarbon has a flash point, measured according to ASTM D93, of greater than 62° C. The composition further comprises an oxygen donor. The oxygen donor comprises respective first and second oxygen donors. The first oxygen donor comprises a hydroxyl group and has a flash point, measured according to ASTM D93, of from 45° C. to 95° C. The second oxygen donor comprises a carbonyl group or an ether group and has a flash point, measured according to ASTM D93, of from 50° C. to 120° C.

The invention provides a method for preparing stable aluminum titanate coated carbon black pigment C (at) Al2TiO5 through a composite non-aqueous precipitation method and application, and belongs to the technical field of preparation of inorganic composite materials. The method comprises the following steps: mixing an aluminum source, a titanium source, a stabilizer and an oxygen donor, adding a composite solvent, carrying out a non-aqueous polycondensation reaction, adding carbon black, and carrying out desolvation treatment and heat treatment to obtain the stable aluminum titanate coated carbon black pigment C (at) Al2TiO5. The method is simple in operation process, the related raw materials are easy to obtain, powder particles with high crystallinity can be synthesized, the preparation period is short, the reaction temperature is low, and the method is suitable for large-scale production. The stable aluminum titanate coated carbon black pigment product prepared by the method is excellent in color generation performance, good in chemical stability, good in high temperature resistance and corrosion resistance, and suitable for the fields of high-temperature corrosion-resistant and weather-resistant coatings, electronic packaging or functional fillers and the like.

A wafer fixing device and an annealing method using the same, at least comprising: a quartz boat; a fixing frame arranged above the quartz boat and capable of being clamped with the wafer when the wafer is vertically arranged in the quartz boat, so that all the wafers are placed in the placement space formed between the quartz boat and the fixing frame without shaking. The fixing frame is hollowed out and arranged at the upper end surface of the wafer, and the fixing frame and the underlying quartz boat jointly improve the stability of wafer placement, prevent wafer shaking, and reduce the probability of wafer breakage. Meanwhile, a guide plate for guiding flow is arranged on both sides of each wafer, which can further improve the fixation of the wafer, make the cold air flow into the guide warehouse formed by the guide plate, accelerate the cooling speed and the uniformity of cooling, further reduce the generation of oxygen donors, and improve the accuracy of resistivity measurement. The annealing time is saved, the energy is saved, and the production cost is reduced.

The invention relates to a method for distinguishing PN inversion caused by an oxygen donor effect based on a crystal segment position, which belongs to the technical field of silicon wafer processing, and comprises the following operation steps of: 1, before statistics, confirming that a crystal segment eliminates the oxygen donor effect after high-temperature annealing, the crystal segment is a P-type product, and no material mixing occurs in the process; step 2, counting 316 crystal section bars in the range of 0-2200mm at the single crystal position, wherein 13 N-type crystal section bars appear; the number of the P type is 303; and it is judged that no N-type phenomenon occurs after 1400 mm according to the occurrence position. And 3, coding the positions of the crystal segments according to rules, and distinguishing the silicon wafers without serious oxygen donor effect, namely the silicon wafers without PN inversion. And 4, carrying out process monitoring according to the code of the crystal segment position, and observing the position of the corresponding block in the single crystal from the information of the block during use. The method has the advantages that whether the corresponding silicon wafer has the serious oxygen donor effect or not can be quickly confirmed, the silicon wafer without the serious oxygen donor effect can be selected for use, and convenience is brought to the use of an electrical monitoring process of a chip manufacturing enterprise.

The present invention relates generally to metal complexes of vanadium, iron, manganese or copper with ligands containing at least one nitrogen and at least one oxygen donor atom, such as asymmetric amino acids and Schiff base ligands.

The invention relates to a method for operating a fuel cell system (1), in which a fuel cell stack (2) of the fuel cell system (1) is supplied on the anode side with a gaseous fuel, in particular hydrogen, and on the cathode side with air as an oxygen donor, before the fuel cell system (1) is shut down, the following steps are carried out: a) determining at least one parameter within the fuel cell system (1) and comparing the at least one parameter with at least one predefined first limit value; the invention relates to a method for operating a fuel cell system (1), comprising the steps of: a) determining a first limit value, b) if the first limit value is below, activating at least one means for releasing thermal energy at key points and / or components (3, 4) within the fuel cell system (1), c) starting a drying procedure, and a control device (10) for a fuel cell system (1).

A method for producing a silicon wafer, characterized in that it comprises: a step to cut a silicon single crystal containing boron as an acceptor to obtain a non-heat-treated silicon wafer, which is a wafer that has not been subjected to heat treatment at a temperature of 300°C or more; a step towards determining a boron concentration with respect to the unheat-treated silicon wafer; and a step towards determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer; wherein a determination of whether a heat treatment at a temperature of 300°C or more and 800°C or less should be carried out on the non-heat-treated silicon wafer is made on the basis of a boron concentration, determined in the step to determine a boron concentration, and an oxygen donor concentration, determined in the step to determine an oxygen donor concentration, where in one case, if a condition exists that the boron concentration is 5x10 14 atoms / cm² 3 or more and 7×10 14 atoms / cm² 3 or less and the oxygen donor concentration is 4×10 14 Donors / cm 3 or more and 8×10 14 Donors / cm 3or less, is not fulfilled with regard to the non-heat-treated silicon wafer, the provision is a provision to carry out polishing with regard to the non-heat-treated silicon wafer without carrying out heat treatment with it at a temperature of 300°C or more.

The invention relates to the technical field of electrode catalytic materials, in particular to a preparation method for precisely constructing a transition-rare earth bimetallic monatomic material based on a confinement strategy of a soft-hard acid-base theory and application of the transition-rare earth bimetallic monatomic material in a lithium-oxygen battery. The preparation method comprises the following steps: S1, selecting transition metal salt, rare earth metal salt, an organic ligand of an oxygen-containing donor and a nitrogen-containing donor; s2, preparing a heteronuclear metal complex; s3, in-situ confinement encapsulation of the complex; and S4, performing high-temperature pyrolysis to form the diatomic catalyst. According to the method disclosed by the invention, molecular pre-constraint under the guidance of a soft-hard acid-base theory is creatively combined with a space confinement effect of ZIF-8, so that the core technical problems of precise pairing of metal atoms and structural stability at a high temperature in synthesis of the heteronuclear diatomic catalyst are successfully solved, and precise, controllable and macro-quantity preparation of heteronuclear diatomic sites such as Co-Gd and the like is realized.

The present application relates to the technical field of infrared optical material preparation, and particularly discloses a large-diameter infrared silicon single crystal, an annealing method thereof and application. The present application provides an annealing method for the large-diameter infrared silicon single crystal by controlling the temperature, heating rate and cooling rate and other parameters in different annealing stages under a protective gas atmosphere. The annealing method can make the single crystal silicon rod uniformly heated, does not increase the oxygen donor concentration, and effectively reduces the internal stress and lattice defects of the single crystal silicon rod. The infrared silicon single crystal prepared by the present application has excellent optical transmittance and optical uniformity, the average infrared transmittance in the range of 2-6 μm is greater than or equal to 52.4%, and the optical uniformity is less than or equal to 7.5*10 ‑5 The large-diameter infrared silicon single crystal prepared by the present application can be applied to the preparation of large-aperture infrared remote sensing detection lenses or infrared optical windows and related fields.

The invention relates to an SPV pretreatment method for improving the detection precision of polished silicon wafer body iron, which belongs to the technical field of silicon wafer processing and detection, and comprises the following steps: 1, processing a light boron-doped monocrystalline silicon rod to obtain a polished silicon wafer finally used for SPV test; and 2, carrying out rapid heat treatment on the polished silicon wafer to eliminate the influence of oxygen donors. And thirdly, a single-piece cleaning machine is used for conducting repeated cleaning so as to increase the surface micro-roughness. And 4, immersing the cleaned silicon wafer into a high-concentration hydrofluoric acid-HF solution with the concentration of 5-15%, so that Si-H bonds are completely formed on the surface of the silicon wafer. And 5, testing minority carrier diffusion length and bulk iron by using a surface photovoltage spectrometer to confirm the SPV pretreatment effect. The device has the advantages of convenience in operation, time saving, labor saving and good effect. And the problem of influence of metal pollution and crystal defects on detection is solved. And the detection precision of the polished silicon wafer body iron is improved by perfecting the SPV pretreatment process.

This invention discloses a method for preparing high-purity copper salt from analytical grade copper salt, belonging to the field of high-purity inorganic chemical preparation and fine purification technology. The method includes the following steps: (1) preparing a high-concentration stock solution; (2) fractional dilution treatment; (3) selective adsorption treatment; (4) fractional recrystallization; and (5) washing and drying treatment. This invention prepares high-purity copper salt with a total metal impurity content of less than 20 ppm and a purity higher than 99.99% through selective complexation-adsorption with an oxygen donor-containing adsorbent material and fractional recrystallization. This invention is applicable to the preparation of high-purity copper sulfate, copper chloride, copper nitrate, and other products.