The invention discloses a method for reducing an oxygen donor content of a Czochralski monocrystal. The method comprises the steps of seeding, shouldering, rotating, obtaining equal diameter, ending and oxygen controlling. The method disclosed by the invention has the advantages as follows: the furnace pressure is reduced to accelerate the pumping of a main pump, increase argon flow, exhaust the SiO volatile gas more quickly, and reduce the content of oxygen which is fed to the molten silicon; the revolving speed of a crucible where the monocrystal grows is reduced, reaction between the molten silicon and the quartz crucible can be slowed down, and the oxygen content in the molten silicon can be reduced, so that the content of oxygen fed to the monocrystal can be reduced, and further the type P monocrystal donor effect can be fundamentally reduced; the revolving speed of the seed crystal can be increased, the latent heat release of crystallization can be quickened, and the cooling speed can be increased, so that the monocrystal can quickly pass through the oxygen donor forming area to reduce the oxygen donor effect.