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Microbridge structured thermalcouple type microwave power sensor

A technology of microwave power and microbridge structure, which is applied in the direction of electric power measurement by thermal method, and can solve the problems affecting thermocouple resistance, increase, impedance mismatch, etc.

Inactive Publication Date: 2003-11-19
INST OF ELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For conventional thermocouple configurations such as figure 1 As shown, in order to match the input impedance of the microwave, the total resistance of the thermocouple is limited to 100Ω, and the doping of silicon cannot be too small, otherwise the resistance of silicon will increase, and the temperature coefficient of resistance of silicon is large. In the case of high power, its The change in resistance affects the total thermocouple resistance, resulting in impedance mismatch
Therefore, the sensitivity of this structure is not very high. Generally, the total sensitivity of the two thermocouples is about 300μV / mW

Method used

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  • Microbridge structured thermalcouple type microwave power sensor
  • Microbridge structured thermalcouple type microwave power sensor
  • Microbridge structured thermalcouple type microwave power sensor

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Embodiment Construction

[0010] The microstructure thermocouple type microwave power sensor uses semiconductor single crystal silicon with a large pyroelectric coefficient as the thermocouple material, and tantalum nitride Ta with a very small temperature coefficient of resistance. 2 N is used as a microwave absorbing material. The microwave power heats the tantalum nitride resistor through the 7mm coaxial cable and the coplanar waveguide on the gemstone substrate, so that the temperature of the silicon (hot junction) under the tantalum nitride resistor rises, and a temperature difference is generated between the hot and cold silicon junctions. Thus generating thermoelectric potential. Detecting this thermoelectric potential realizes microwave power measurement. Such as figure 2 As shown, gold lead 21 via Ta 2 N resistance 24 forms microwave heat-absorbing path to gold lead wire 22, and its resistance value is determined by Ta in the center of the bridge. 2 N resistance 24 is formed. The gold wi...

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Abstract

the thermocouple type microwave power sensor with microbridge structure includes microwave heat-absorbing channel formed from gold lead (A) through Ta2N resistor to gold lead (B) and thermocouple channel formed from gold lead (C), through cold-junction and silicone frame to hot-junction, and through particle Ta2N resistor and gold lead (B), and the film between gold lead (A) and gold lead (B) possesses a bridge-shaped heat flow channel. Said invention can further reduce heat transmission loss and heat volume of thermocouple, can raise sensitivity and response characteristics of sensor, reduce mismatch error and improve and improve stationary-wave ratio of sensor.

Description

technical field [0001] The invention relates to the technical field of microwave power measurement, in particular to semiconductor microwave power measurement. Background technique [0002] Power measurement occupies a pivotal position in electromagnetic measurement, and the sensing elements include thermistors, thermal variable resistors, thin film resistors, diodes, pyroelectric films, Hall effect and so on. The sensor still stays in several aspects such as thermistor and thermoelectric film, with poor reliability, low precision and narrow frequency band. The semiconductor thermocouple type microwave power sensor has the characteristics of high sensitivity, wide detection frequency range, high precision, fast response, good reliability, and easy mass production. It has been widely used in imported power meters, such as HP's 435A / 8481A thermal Dual Power Meter System. The principle is as figure 1 (a, b). Selective diffusion of N on P-type silicon 8 substrate + Silicon ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R21/04
Inventor 陈德勇崔大富
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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