Sapphire-based GaN quasi-vertical Schottky diode reverse electric leakage improvement method and Schottky diode

Abstract

The invention discloses a sapphire-based GaN quasi-vertical Schottky diode reverse electric leakage improvement method and a Schottky diode. The method comprises: preparing a photoresist pickling film on a sapphire-based GaN sample; then performing etching operation on the sapphire-based GaN sample prepared with the photoresist pickling film by adopting an inductive coupling plasma dry etching process until an n+GaN layer is etched; carrying out low-temperature rapid thermal annealing treatment on the etched sapphire-based GaN sample to repair etching damage; then, evaporating a Ti / Al / Ni / Au metal layer on the sapphire-based GaN sample subjected to rapid thermal annealing treatment by adopting photoetching and electron beam processes; performing high-temperature rapid thermal annealing treatment to form corresponding ohmic contact; and carrying out Ni / Au Schottky contact preparation by adopting an electron beam. The damage of the etched GaN mesa can be rapidly and efficiently repaired in the Ar environment, and the repairing effect is obvious.

Description

technical field [0001] The invention belongs to the technical field of wide bandgap semiconductor devices, in particular to a method for improving the reverse leakage of a sapphire-based GaN quasi-vertical Schottky diode and the Schottky diode. Background technique [0002] The third-generation wide-bandgap semiconductor material represented by gallium nitride (GaN) is rapidly becoming the material of choice for high-frequency and high-power devices due to its high critical breakdown field strength and high electron saturation drift velocity. Especially in the field of power diode rectifier devices, it has important application prospects. As an important two-terminal electronic component, Schottky diode (SBD) has important applications in circuits such as detection and frequency mixing. However, an important problem at present is that the reverse leakage of the prepared Schottky diodes is generally large, which makes the device undergo early pre-breakdown under very low reve...

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Problems solved by technology

However, an important problem at present is that the reverse leakage of the prepared Schottky diodes is generally large, which makes the device undergo early pre-breakdown under very low reverse bias voltage, which seriously reduces the performance and performance of the device. application, so how to effectively reduce the reverse leakage is extremely important for expanding the application of GaN Schottky diodes

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