Method for in-situ real-time quantitative detection of film roughness by using RHEED
A real-time quantitative and roughness technology, which is applied in the direction of measuring devices, optical devices, semiconductor/solid-state device testing/measurement, etc., can solve problems such as inability to detect intrinsic information of thin films, property changes, and thin film instability
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Embodiment (1
[0032] Deposited on SrTiO by pulsed laser 3 (001) Growth of LaCoO on Single Crystal Substrate 3 Thin film, the growth condition is pure oxygen, the oxygen pressure is 10Pa, and the laser energy density is 2J / cm 2 , the laser frequency is 1Hz, the RHEED voltage is set to 30kV, and the incident angle is set to 2°.
[0033] Heating the substrate and growing LaCoO with different surfaces at different temperatures 3 For thin films, the growth temperatures are 560°C, 580°C, 600°C, 620°C, and 640°C, respectively.
[0034] After the growth, intercept the RHEED diffraction image obtained by the CCD, such as figure 1 shown.
[0035] Then obtain the brightness distribution map of the RHEED diffraction image, extract the characteristic parameter A of the surface roughness from the diffraction pattern, and calculate its value, such as figure 2 shown.
[0036] Bring the value of A into the functional relationship of surface roughness:
[0037]
[0038] Look up this function table...
Embodiment (2
[0040] Deposited on SrTiO by pulsed laser 3 (001) Growth of LaCoO on Single Crystal Substrate 3 Thin films, grown under the substrate temperature of 650°C, oxygen pressure of 20Pa, and laser energy density of 1.5J / cm 2 , the RHEED voltage is 30kV, and the incident angle is 1.8°.
[0041] During the growth process, a RHEED diffraction pattern was obtained every 5 seconds, the brightness distribution of the diffraction pattern was obtained in real time, and the characteristic parameter A of the diffraction pattern was extracted at the same time.
[0042] Bring the value of A into the functional relationship of surface roughness:
[0043]
[0044] According to this function table, the roughness σ value of the film can be obtained in real time, such as Figure 4 shown.
Embodiment (3
[0046] Grow InGaN / GaN multiple quantum well films on silicon single crystal substrates by metal organic chemical vapor deposition system (MOCVD), grow AlN buffer layer at 400-500 °C, grow non-doped GaN layer at 500-700 °C, and grow at 700 °C Growth of InGaN / GaN multiple quantum wells at ~800°C. The RHEED voltage is 15kV and the incident angle is 0.5°.
[0047] During the growth process, a RHEED diffraction pattern was obtained every 3 seconds, the brightness distribution of the diffraction pattern was obtained in real time, and the characteristic parameter A of the diffraction pattern was extracted at the same time.
[0048] Bring the value of A into the functional relationship of surface roughness:
[0049]
[0050] According to this function table, the roughness σ value of the film can be obtained in real time.
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