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Photoelectrochemical photodetector and preparation method thereof

A photodetector and photoelectrochemical technology, applied in photometry, photometry using electric radiation detectors, optical radiation measurement, etc., can solve the problem of inability to adapt to the large-scale production of full-spectrum photodetectors, poor photodetection performance, etc. problem, to achieve the effect of high applicability and reduce manufacturing cost

Active Publication Date: 2021-06-01
UNIV OF SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problems of poor overall photodetection performance of the above-mentioned traditional MSM or planar thin-film photodetectors, and the inability to adapt to the large-scale production of full-spectrum photodetectors, the present invention proposes a photoelectrochemical photodetector and its preparation method

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  • Photoelectrochemical photodetector and preparation method thereof
  • Photoelectrochemical photodetector and preparation method thereof
  • Photoelectrochemical photodetector and preparation method thereof

Examples

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Embodiment 1

[0047] One aspect of the present invention proposes a novel solar-blind ultraviolet photoelectrochemical photodetector, Figure 1A is a schematic diagram of AlGaN nanowires in an embodiment of the present invention. The novel solar-blind ultraviolet photoelectrochemical photodetector includes a photocathode, and the photocathode includes a substrate 110, and also includes an AlGaN nanowire 120 grown on the surface of the substrate 110, thereby constituting the photocathode of the novel photoelectrochemical photodetector proposed by the present invention The basic structure of 100. Wherein, GaN-based nanowires include n-type GaN-based nanowires and p-type GaN-based nanowires. Those skilled in the art should understand that the nanowire structure can be regularly arranged, such as nanowire structures prepared by directional growth, and can also include irregularly arranged nanowire structures. The so-called "rule" can be understood as whether the arrangement of nanowires has Pe...

Embodiment 2

[0073] The present invention proposes a gallium nitride-based material nanowire structure applied to photodetectors, and correspondingly proposes a preparation method for the material structure, overcomes technical difficulties in this field, and achieves a breakthrough and unexpected technology Effect. Among them, those skilled in the art should understand that the nanowire structure can be a regular arrangement, such as a nanowire structure prepared by directional growth, or an irregular arrangement of nanowire structures. The so-called "rule" can be understood as the arrangement of nanowires. Periodic; the so-called "irregular" can be understood as the arrangement of the nanowires does not have periodicity, and can also be understood as the length, diameter, spacing between adjacent nanowires, nanometers, etc. The growth angle of the line (relative to the substrate) is inconsistent and irregular. In addition, in the introduction of gallium nitride-based materials in the pr...

Embodiment 3

[0100] One aspect of the present invention proposes a sun-blind ultraviolet photoelectrochemical photodetector, such as Figure 8A It is a schematic diagram of a solar-blind ultraviolet photoelectrochemical photodetector GaN-based nanohole array in an embodiment of the present invention, and Figure 8BIt is a schematic diagram of a solar-blind ultraviolet photoelectrochemical photodetector modified GaN-based nanopore array of co-catalyst nanoparticles in an embodiment of the present invention. The photodetector includes a photoelectrode, and the photoelectrode includes a substrate 810 and a substrate 810. The array 830 of GaN-based nanoholes 840 formed on the surface of the substrate 810 constitutes the basic structure 800 of the photocathode of the novel photoelectrochemical photodetector proposed by the present invention.

[0101] Among them, those skilled in the art should understand that the nanopore structure can be a regular arrangement, such as a nanopore structure prep...

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Abstract

The invention discloses a preparation method of a novel photoelectrochemical photodetector, and the method is characterized by comprising the steps: selecting gallium nitride-based compound semiconductor material components according to the wavelength of light to be detected of the photodetector; forming a gallium nitride-based nanowire on the surface of the substrate according to the components; uniformly modifying cocatalyst nanoparticles on the gallium nitride-based nanowire; packaging the gallium nitride-based nanowire with the modified cocatalyst nanoparticles to obtain the photoelectrode; and preparing the photoelectrochemical photodetector by using the photoelectrode. The photodetector applied to different optical detection scenes can be produced only by adjusting the component content in the nanowire in the growth process of the nanowire. Finally, the novel full-wave band photoelectrochemical photodetector which is high in responsivity, rapid in reaction, economical, environment-friendly and self-energized is prepared by adopting the same technological process. According to the invention, the gallium nitride-based nanowire is creatively applied to the research of the photoelectrochemical photodetector, and the method has very important significance.

Description

technical field [0001] The invention relates to the technical field of photoelectrochemical photodetectors, in particular to a photoelectrochemical photodetector and a preparation method thereof. Background technique [0002] Photodetectors (i.e., light detectors), devices that capture light signals and convert them into electrical signals, are widely used in imaging, communication, sensing, computing, emerging wearable devices, and space domain detection. Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc.; in the ultraviolet band, it is mainly used for flame detection and missile alarm. , ozone monitoring and non-line-of-sight optical communication, etc. [0003] Most of today's photodete...

Claims

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Application Information

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IPC IPC(8): G01J1/42G01J1/48B82Y15/00B82Y20/00B82Y40/00
CPCG01J1/42G01J1/48B82Y15/00B82Y20/00B82Y40/00
Inventor 孙海定汪丹浩方师张伟
Owner UNIV OF SCI & TECH OF CHINA
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