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Lunar dust protection conductive film with micro-nano structure and preparation method thereof

A technology of micro-nano structure and conductive film, applied to the conductive layer on the insulating carrier, equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, etc., to achieve good moon dust protection effect, good conductive properties, good Effects of Lunar Environmental Adaptability

Active Publication Date: 2021-06-01
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the problem that human operation and external power supply are required in the moon dust protection method in the prior art, and provides a moon dust protective conductive film with a micro-nano structure that does not require astronauts to operate and does not need external power supply and its preparation method

Method used

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  • Lunar dust protection conductive film with micro-nano structure and preparation method thereof
  • Lunar dust protection conductive film with micro-nano structure and preparation method thereof
  • Lunar dust protection conductive film with micro-nano structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-5

[0034] Embodiment 1-5: Secondary nano conductive filling layer 3 solvent ratio

[0035] The aluminum metal substrate was ultrasonically cleaned with ethanol and ultrapure water for 15 minutes in turn for surface polishing treatment, and then placed in a plasma treatment box for plasma treatment (power 200w, time 30s), and the surface polishing treatment of aluminum Coat a layer of 3M 2216 B / A gray glue on the metal substrate, then spin-coat ITO aqueous solution (5000r / min, 10s), then place it in an oven to dry for 30min (70°C), take it out and perform compression molding, and then put it in the oven to dry 4h (70°C). On the surface of the primary micron structure layer 2, evenly spray the graphene sheet solution with a mass fraction of 3%, 4%, 5%, 6% and 7%, spray for 10s, then place it in an oven at 70°C for 0.5h, and take it out Afterwards, evenly wipe off the graphene sheet solution that is not closely adhered to the surface to form a secondary nanometer conductive filling...

Embodiment 6-10

[0039] Embodiment 6-10: Secondary nano conductive filling layer 3 solvent ratio

[0040] Complete the preparation of the first-level micron structure of the film according to the method steps listed in Examples 1-5. The second-level nano-conductive filling layer 3 is sprayed with carbon nanotube solutions with different mass fractions, sprayed for 10 seconds, and then placed in an oven at 70 ° C. Bake for 0.5h, take it out and evenly wipe off the carbon nanotube solution that is not tightly bonded on the surface to form a secondary nano-conductive filling layer 3. The contact angle of the protective film and the decrease in the adhesion of moon dust measured through experiments are shown in Table 2. .

[0041] Table 2 Performance comparison under different carbon nanotube concentrations

[0042]

[0043] The study found that the mass percentage of the carbon nanotube solution directly affects the contact angle of the protective conductive film and the adhesion force with t...

Embodiment 11-13

[0044] Examples 11-13: Secondary nanometer conductive filling layer 3 solvent ratio

[0045] Complete the preparation of the first-level micron structure of the film according to the method steps listed in Examples 6-9. The second-level nano-conductive filling layer 3 is sprayed with white carbon black solutions with different mass fractions, sprayed for 10 seconds, and then placed in an oven at 70 ° C. Bake for 0.5h, take it out and evenly wipe off the silica solution that is not tightly bonded on the surface to form a second-level nano-conductive filling layer 3. The contact angle of the protective film and the decrease in the adhesion of moon dust measured through experiments are shown in Table 3. .

[0046] Table 3 Performance comparison under different silica concentrations

[0047]

[0048] The study found that the mass percentage of silica solution directly affects the contact angle of the protective conductive film and the adhesion between the protective conductive...

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Abstract

The invention relates to the technical field of lunar dust protection, in particular to a lunar dust protection conductive film with a micro-nano structure and a preparation method thereof. The lunar dust protection conductive thin film comprises a metal substrate layer, a first-level micrometer structure layer and a second-level nanometer conductive filling layer, wherein the first-level micrometer structure layer with a rough surface is formed on the metal substrate layer through a reverse mold technology; and a conductive layer is coated on the first-level micrometer structure layer to form the second-level nanometer conductive filling layer. According to the invention, the surface energy between the protected surfaces is reduced through the first-level micrometer structure layer, so that the Van der Waals force between the lunar dust and the protected surfaces is reduced; according to the lunar dust protection conductive film, the conductive characteristic of the protection film is improved by constructing the second-level nanometer conductive filling layer, so that the electrostatic force between lunar dust and a protected surface is reduced, and a good lunar dust protection effect is achieved by reducing Van der Waals force and the electrostatic force between the lunar dust and the protected surface at the same time.

Description

technical field [0001] The present application relates to the technical field of moon dust protection, in particular to a moon dust protective conductive film with a micro-nano structure and a preparation method thereof. Background technique [0002] Since the implementation of the Apollo moon landing program in the 1960s, moon dust has had an extremely serious impact on lunar exploration equipment, space suits, thermal control equipment, optical systems, and solar cells. The main source of moon dust is the weathering of the lunar surface and micro meteors The collision of objects, the surface of the moon is subject to friction and the solar photoelectric effect is very easy to charge, and the charged moon dust will suspend and migrate. The moon dust deposited on the lunar exploration equipment is deposited on the surface of the equipment for a long time due to its strong adhesion, affecting Lunar exploration equipment works normally or even fails. In addition, the moon dus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/0026Y02E10/50
Inventor 张海燕王鹢李存惠王晓王永军赵呈选庄建宏王卫东王健
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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