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Constant-voltage and constant-current protective gas device for indium phosphide single crystal growth and indium phosphide single crystal growth method

A technology of constant voltage and constant current, indium phosphide, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., to achieve the effect of improving the crystallization rate

Pending Publication Date: 2021-06-04
中锗科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a constant-voltage constant-current protective gas device for growing indium phosphide single crystals and a method for growing indium phosphide single crystals, which solves the problem of gas convection under high pressure and improves the crystallization rate

Method used

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  • Constant-voltage and constant-current protective gas device for indium phosphide single crystal growth and indium phosphide single crystal growth method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as figure 1 As shown, a constant voltage constant current protective gas apparatus for phtrochemic indium single crystal growth includes a VGF growth furnace, a gas storage tank, a high pressure air pump and a gas heating sleeve; the VGF growth furnace includes a high pressure chamber, and the top of the high pressure chamber is provided The cover, the bottom is provided with a lower cover, and a cylindrical heater is provided inside the high pressure chamber. The upper cover is provided with a vent line in communication with the heater. The lower cover is provided with an intake pipeline communication with the heater; The vent line communicates with the air inlet of the gas storage tank through the air inlet of the gas storage tank, through the second pipeline and the air pump inlet, the air pump of the high-pressure air pump passes through the third pipeline and The gas heating sleeve is connected, and the air heating sleeve of the gas heating sleeve communicates wit...

Embodiment 2

[0034]Based on the first embodiment, further improvement: In order to facilitate control and adjustment, the air passage branch on the upper cover is two channels, all the way to the first pipeline, and the other is provided with a first valve; There is a second valve on a pipe; the intake pipeline branches on the lower cover are two ways, all the way to the fourth pipeline, and there is a third valve on the other side; the fourth-channel is provided with a fourth valve. In order to facilitate the meter of the heater into and out of nitrogen flow, a first flow meter is provided on the first line, and a second flow meter is provided on the fourth conduit; the first flow rate is set upstream of the second valve; the second flow rate is set The downstream of the fourth valve. The first valve, the second valve, the third valve, and the fourth valve are both a needle valve.

Embodiment 3

[0036] Based on the embodiment 2, further improvement: in order to facilitate the formation of temperature gradient in the heater, the heater is segmented from the lower to the upper to the upper part to the first temperature zone, the second temperature zone, the third temperature zone and the first Four temperature zones. The temperature regions control the heating temperature, and the specific control method can directly use the existing temperature control technology, and the present application is not particularly improved, and therefore will not be described again.

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Abstract

The invention discloses a constant-pressure and constant-current protective gas device for indium phosphide single crystal growth and a indium phosphide single crystal growth method, wherein the constant-pressure and constant-current shielding gas device comprises a VGF growth furnace, a gas storage tank, a high-pressure gas pump and a gas heating jacket; the VGF growth furnace comprises a high-pressure cavity, an upper cover is arranged at the top of the high-pressure cavity, a lower cover is arranged at the bottom of the high-pressure cavity, a cylindrical heater is arranged on the inner side of the high-pressure cavity, a gas outlet pipeline communicated with the heater is arranged on the upper cover, and a gas inlet pipeline communicated with the heater is arranged on the lower cover; a gas outlet pipeline on the upper cover is communicated with a gas inlet of the gas storage tank through a first pipeline, a gas outlet of the gas storage tank is communicated with a gas inlet of the high-pressure gas pump through a second pipeline, and a gas outlet of the high-pressure gas pump is communicated with a gas inlet of a gas heating sleeve through a third pipeline; and a gas outlet of the gas heating sleeve is communicated with a gas inlet pipeline on the lower cover through a fourth pipeline. According to the device, stable one-way flowing of nitrogen hot airflow can be achieved, convection of gas in the furnace is avoided, and the crystallization rate is greatly increased and reaches 45.3% or above.

Description

Technical field [0001] The present invention relates to a constant voltage constant current protective gas apparatus and a method of phosphizing indium monocryl, a method of phosphizing indium monocryllation, which belongs to the technical field of single crystal growth. Background technique [0002] The phosphinated indium single crystal growth method has a LEC straight pull method, VGF method, and the like. Due to the expensive equipment, the LEC Different Equipment is unsatisfactory, there is currently no scale production, and only the research institute is carried out. The VGF method is simple, the technology is mature, and is currently mainly used by the production process. [0003] The phosphide of indium monocrystalline VGF is a seed crystal of the primary crystal to load the seed crystal in a seed coater at the bottom of a nitride crucible, and then add a phosphatine polymantry, sealant, dopant, or the like. Boron nitride. Inside the crucible, then put the 坩 坩 坩 坩 in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B11/00C30B27/00
CPCC30B29/40C30B11/006C30B27/00Y02P70/50
Inventor 柯尊斌乔印彬罗福敏王卿伟
Owner 中锗科技有限公司