Method for preparing pure aluminum metallographic sample through dielectric barrier discharge technology

A technology of dielectric barrier discharge and pure aluminum, which is applied in the preparation, sampling, and instrumentation of test samples, and can solve problems such as unstable effects, chemical pollution, and high experience requirements

Active Publication Date: 2021-06-11
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing pure aluminum metallographic samples by dielectric barrier discharge technology, to overcome the existing chemical etching and anode coating method Both have the disadv

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  • Method for preparing pure aluminum metallographic sample through dielectric barrier discharge technology
  • Method for preparing pure aluminum metallographic sample through dielectric barrier discharge technology
  • Method for preparing pure aluminum metallographic sample through dielectric barrier discharge technology

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Cut pure aluminum into blocks, sand it to 3000 mesh sandpaper and use 0.5 μm aluminum oxide abrasive paste to polish to the mirror surface, wash and dry with acetone and alcohol before use. Among them, the height of the sample is 4mm, the ambient temperature is adjusted to 15°C, and the humidity is less than 30%. The pure aluminum sample is placed between the medium plates, and the gap between the medium plates is adjusted to 4mm. The cold dryer is connected, and then the cold dryer is connected with the closed oval reactor with a conduit. After the instrument is connected, first open the gas cylinder and the cold dryer, and the ventilation flow rate is 500mL / min. After ventilating for 0.5h, turn on the atmospheric pressure low-temperature plasma power supply to treat pure aluminum. Adjust the power frequency to 7kHz, and control the input current at 1.5. The ambient atmosphere of the treatment is dry oxygen, and the treatment time is 30 minutes. After the treatment, ...

Embodiment 2

[0030] Cut pure aluminum into blocks, sand it to 3000 mesh sandpaper and use 0.5 μm aluminum oxide abrasive paste to polish to the mirror surface, wash and dry with acetone and alcohol before use. Among them, the height of the sample is 6mm, the ambient temperature is adjusted to 25°C, and the humidity is less than 30%. The pure aluminum sample is placed between the medium plates, and the gap between the medium plates is adjusted to 8mm. The cold dryer is connected, and then the cold dryer is connected with the closed oval reactor with a conduit. After the instrument is connected, first open the gas cylinder and the cold dryer, and the ventilation flow rate is 500mL / min. After ventilating for 1 h, turn on the atmospheric pressure low-temperature plasma power supply to treat pure aluminum. Adjust the power frequency to 13kHz, and control the input current at 2.0A. The ambient atmosphere of the treatment is dry oxygen, and the treatment time is 60 minutes. After the treatment,...

Embodiment 3

[0032] Cut pure aluminum into blocks, sand it to 3000 mesh sandpaper and use 0.5 μm aluminum oxide abrasive paste to polish to the mirror surface, wash and dry with acetone and alcohol before use. Among them, the height of the sample is 5mm, the ambient temperature is adjusted to 20°C, and the humidity is less than 30%. The pure aluminum sample is placed between the medium plates, and the gap between the medium plates is adjusted to 6mm. The cold dryer is connected, and then the cold dryer is connected with the closed oval reactor with a conduit. After the instrument is connected, first open the gas cylinder and the cold dryer, and the ventilation flow rate is 500mL / min. After ventilating for 0.8h, turn on the normal-pressure low-temperature plasma power supply to treat pure aluminum. Adjust the power frequency to 10kHz, and control the input current at 1.8A. The ambient atmosphere of the treatment is dry oxygen, and the treatment time is 45 minutes. After the treatment, the...

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Abstract

The invention discloses a method for preparing a pure aluminum metallographic sample through a dielectric barrier discharge technology, which comprises the following steps: cutting pure aluminum into blocks, carrying out grinding and polishing, carrying out cleaning and drying to obtain a pure aluminum sample, and adjusting the environment temperature and humidity; placing a pure aluminum sample between the dielectric plates, adjusting gaps between the dielectric plates, introducing dry oxygen into the reactor, and turning on a low-temperature plasma power source to treat the pure aluminum sample for 30-60 min; and after the treatment is finished, obtaining the pure aluminum metallographic sample. The method is simple and easy to operate and free of chemical pollution, and the treated sample can be directly used for observing the metallographic structure.

Description

technical field [0001] The invention belongs to the field of metallographic sample preparation, and in particular relates to a method for preparing pure aluminum metallographic samples through dielectric barrier discharge technology. Background technique [0002] Pure aluminum (above 99.0% purity) is generally widely used in semiconductor manufacturing, aluminum foil for capacitors, lighting and other fields. Metallographic observation is an important analytical method for studying the structure of pure aluminum, and it is often used in material heat treatment and deformation process research, failure analysis, etc. Commonly used metallographic sample preparation techniques include chemical etching and anodic coating. [0003] The chemical etching method uses the higher free energy of the grain boundary to be preferentially corroded to form pits, resulting in the weakening of the reflected light intensity at the grain boundary to obtain the grain size and morphology charact...

Claims

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Application Information

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IPC IPC(8): G01N1/28G01N1/32G01N1/34
CPCG01N1/28G01N1/286G01N1/32G01N1/34G01N2001/2873
Inventor 周根树张潇珂任颖李禹辰康珍玮
Owner XI AN JIAOTONG UNIV
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