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Gas sensor and manufacturing method thereof

A gas sensor and metal electrode technology, applied in the field of sensors, can solve the problems of slow desorption process, poor selectivity, limited gas response sensitivity, etc., to improve specific selectivity, realize room temperature detection, and flexible response strength and response selectivity. Effect

Pending Publication Date: 2021-06-11
LINGNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This patent only uses the graphene film covering the metal electrode as the sensitive material. Since the step Sp2 hybrid orbital between the graphene carbon atoms has a certain chemical inertness, the sensitivity of the gas response of this patent is limited. The desorption process slower and less selective

Method used

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  • Gas sensor and manufacturing method thereof
  • Gas sensor and manufacturing method thereof
  • Gas sensor and manufacturing method thereof

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Embodiment 1

[0032] Specifically, such as figure 1 As shown, the gas sensor of the present embodiment includes a substrate 1, a graphene layer 2, a metal electrode pair, and a metal oxide layer 4; the substrate 1, the graphene layer 2, and the metal electrode pair are arranged sequentially from bottom to top; a metal electrode pair Including two metal electrodes 3, the area between the two metal electrodes 3 of a metal electrode pair is a channel;

[0033] The graphene layer 2 at the channel is provided with a gap groove 5, so that the graphene layer 2 at the channel is disconnected to form a graphene electrode pair; the metal oxide layer 4 is located at the channel and covers the graphene electrode On the pair and gap groove 5, to connect the graphene electrode pair, the metal oxide layer 4 of the present embodiment is covered in the central region of the graphene electrode pair; The area of ​​the metal oxide layer 4 is less than the area of ​​the channel, so that in the channel It has a...

Embodiment 2

[0040] Specifically, such as Figures 2 to 3 As shown, in the gas sensor of this embodiment, the thickness of the silicon dioxide layer 102 of this embodiment is 90 nm. The width of the gap groove 5 in this embodiment is 200 nm. The metal oxide layer 4 in this embodiment is a copper oxide layer. The metal material is deposited by photolithography and electron beam evaporation; the thickness of the metal material is 5nm in this example. In this embodiment, the thickness of the chromium layer 302 is 3 nm, and the thickness of the gold layer 301 is 6 nm. In this embodiment, the distance between the two metal electrodes 3 is 2mm.

[0041] This embodiment 2 also provides a method for manufacturing the above-mentioned gas sensor. The manufacturing material includes the substrate 1, including the following steps:

[0042] Step S1, preparing a graphene layer 2 on the upper surface of the substrate 1;

[0043] Step S2, making metal electrode pairs on the graphene layer 2, the area...

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Abstract

The invention relates to the technical field of sensors, and provides a gas sensor and a manufacturing method thereof. The gas sensor comprises a substrate, a graphene layer, a metal electrode pair and a metal oxide layer, the substrate, the graphene layer and the metal electrode pair are sequentially arranged from bottom to top; one metal electrode pair comprises two metal electrodes, and an area between the two metal electrodes of one metal electrode pair is a channel; a gap groove is formed in the graphene layer at the channel, so that the graphene layer at the channel is disconnected, and a graphene electrode pair is formed; the metal oxide layer is located at the channel and covers the graphene electrode pair and the gap groove so as to be connected with the graphene electrode pair; the area of the metal oxide layer is smaller than that of the channel, so that the channel is internally provided with the exposed graphene layer which is not covered by the metal oxide layer. The invention provides the gas sensor which is high in response strength and good in response specific selectivity.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a gas sensor and a manufacturing method thereof. Background technique [0002] At present, the most sensitive materials used in gas sensors are mainly metal oxide layer semiconductors and organic semiconductor materials. Traditional thick-film metal oxide layer semiconductor sensors react very slowly with the gas to be detected at room temperature, and usually need to be preheated and worked at a higher temperature. ℃ and so on. However, the high operating temperature will make the impedance of the sensor very large, and it is necessary to design a more complicated circuit to avoid leakage. However, due to poor electrical and mechanical properties, complex material preparation process, and high cost, organic semiconductor materials limit their functional expansion in high-performance gas sensors. As a typical two-dimensional material, graphene is widely used in high-performanc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/30
CPCG01N27/30
Inventor 赵珉刘桂英刘如军
Owner LINGNAN NORMAL UNIV
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