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Optical detector with superstructure surface coupled with transverse thermoelectric film and manufacturing method

A technology of transverse pyroelectric and optical detectors, applied in the direction of electric radiation detectors, etc., can solve the problems of inability to achieve spectral selective response, low sensitivity of mid- and far-infrared light, etc., and achieve the effect of simple structure and fast response

Active Publication Date: 2020-08-21
YUNNAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, since this photodetector is also based on the principle of light absorption-induced photo-thermal-electric conversion, as long as the photosensitive material absorbs photon energy, a temperature difference will be formed on the upper and lower surfaces of the lateral pyroelectric film, which will induce a thermovoltage response. Therefore, from From ultraviolet light to infrared light, no matter which wavelength of light irradiates the film, a voltage response will be generated. The photodetector has the characteristics of wide spectral response and cannot achieve spectral selective response.
In addition, due to the large penetration depth of mid- and far-infrared light in the photosensitive film, the temperature difference generated by light irradiation on the upper and lower surfaces of the film is small, and the sensitivity of detecting mid- and far-infrared light by using a photodetector based on the transverse pyroelectric effect is not high.

Method used

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  • Optical detector with superstructure surface coupled with transverse thermoelectric film and manufacturing method
  • Optical detector with superstructure surface coupled with transverse thermoelectric film and manufacturing method
  • Optical detector with superstructure surface coupled with transverse thermoelectric film and manufacturing method

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Embodiment 1

[0050] This embodiment discloses a photodetector with a superstructure surface coupled to a transverse pyroelectric thin film. The superstructure surface is coupled to the transverse pyroelectric thin film 2 through an intermediate insulating layer 5. The structure of the formed detector is as follows figure 1 As shown, the detector includes: an oblique substrate 1, and a lateral pyroelectric thin film 2 epitaxially grown on the oblique substrate 1, the surface normal direction of the oblique substrate 1 is relative to the crystal of the substrate 1 There is an inclination angle in the direction of 5°-30°, and the lattice of the substrate 1 matches the lattice of the lateral thermoelectric thin film 2. At both ends of the surface of the lateral thermoelectric film 2 along the oblique direction of the substrate, a Ti film (or Cr film) bonding layer 3 with a thickness of 5 nm is deposited first, and then an 80 nm thick Au film electrode coating is deposited on the bonding layer....

Embodiment 2

[0053] This embodiment is based on the first embodiment, and discloses a photodetector with a superstructured surface coupled with a transverse pyroelectric thin film 2. The metal thin film with a superstructured surface and the dielectric layer form an infrared light absorber, which is directly deposited on the A mid-to-far infrared photodetector is formed on the surface of the lateral pyroelectric film 2, and its structure is as follows: Figure 6 As shown, the detector includes: an oblique substrate 1, and a lateral pyroelectric thin film 2 epitaxially grown on the oblique substrate. Similarly, the surface normal direction of the oblique substrate is relative to the crystal of the substrate 1. There is an inclination angle in the direction of 5°-30°, and the lattice of the substrate 1 matches the lattice of the lateral thermoelectric thin film 2. At both ends of the lateral thermoelectric thin film 2, a bonding layer 3 of a Ti film (or Cr film) with a thickness of 5 nm is ...

Embodiment 3

[0056] This embodiment is based on a method of using a photodetector with a superstructure surface coupled with a transverse pyroelectric thin film 2 in Embodiments 1 and 2, such as Figure 7 As shown, the continuous infrared light is incident on the infrared detector 18 after passing through the chopper 17, and the optical signal is converted into an electrical signal output, and the magnitude of the electrical signal is recorded by a lock-in amplifier; the pulsed infrared light can directly heat the infrared detector 18 , to generate a time-resolved voltage signal that is acquired by an oscilloscope.

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Abstract

The invention discloses an optical detector with a superstructure surface coupled with a transverse thermoelectric film. The transverse thermoelectric film epitaxially grows on the surface of a beveled substrate; a first electrode and a second electrode are respectively arranged at two ends of the surface of the transverse thermoelectric film along the direction of the beveled substrate; an infrared absorber with the superstructure surface is arranged between the first electrode and the second electrode, is coupled with the transverse thermoelectric film and is insulated from the first electrode and the second electrode. The beneficial effects of the invention are that: high-efficiency detection and quick-response detection of mid-infrared light and far-infrared light is achieved; room-temperature detection of mid-infrared light and far-infrared light can be realized; selective detection of infrared light with specific wavelength is realized, selective detection of different polarizedlight is realized, and the optical detector can be applied to a non-dispersive infrared gas sensor. The optical detector is simple in structure, is manufactured through a thin film deposition process,the manufacturing process is compatible with a COMS process, and is easy for large-scale production.

Description

technical field [0001] The invention relates to the field of infrared photodetection devices, in particular to a photodetector with a superstructure surface coupled with a transverse pyroelectric thin film and a manufacturing method thereof. Background technique [0002] The infrared photodetector is a device that converts the incident infrared radiation signal into an electrical signal output. The wavelength of infrared radiation is between visible light and microwave, which is imperceptible to the human eye. The infrared detector converts it into an electrical signal output, which plays an important role in the detection of targets and the acquisition of images, especially at night or in dark environments Among them, infrared detection technology makes it easy to observe and monitor heat-radiating objects, and detect and track maneuvering targets. Therefore, it plays an important role in the fields of daily life and weaponry. [0003] According to different working princ...

Claims

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Application Information

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IPC IPC(8): G01J5/12
CPCG01J5/12
Inventor 熊飞郑烁周荣胡万彪姜鹏
Owner YUNNAN UNIV
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