Silicon carbide epitaxial layer, etching method thereof and silicon carbide device

Abstract

The invention discloses a silicon carbide epitaxial layer, an etching method thereof and a silicon carbide device. The etching method comprises the following steps that: a mask with a set etched pattern is formed on the silicon carbide epitaxial layer; the silicon carbide epitaxial layer is etched by using etching gas, wherein the etching gas is gas which can generate a polymer after reacting with the silicon carbide epitaxial layer; and the polymer is attached to the bottom and the side wall of the set etched pattern in the mask. According to the method, the silicon carbide epitaxial layer is etched through the etching gas containing chlorine, argon and hydrogen bromide; the polymer generated in the reaction process is attached to the bottom and the side wall of the etched pattern in the mask, so that the side wall and corners are protected, etching of reactive ions to the corners of the etched pattern is weakened, a micro-channel is effectively prevented from being formed at the etched pattern, and the reliability of the silicon carbide device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a silicon carbide epitaxial layer, an etching method thereof, and a silicon carbide device. Background technique [0002] The silicon carbide etching process is a key process in the manufacture of silicon carbide devices. Since the silicon carbide material has the characteristics of high hardness and stable chemical properties, if wet etching is used, the etching requirements cannot be met. At present, the etching of silicon carbide often adopts a plasma dry etching process. However, in the existing dry etching process, micro-channels are easily formed at the sidewalls and corners of the mask etching pattern, and the existence of micro-channels will cause voids to be formed in the next filling process, thereby Reduce the reliability of silicon carbide devices. Contents of the invention [0003] The technical problem to be solved by the present invention i...

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to overcome the defect that the etching method of silicon carbide epitaxial layer in the prior art is easy to cause micro-channels on the side walls and corners and reduce the reliability of silicon carbide devices, and to provide a carbonization Silicon epitaxial layer and its etching method, silicon carbide device

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