Semiconductor structure and fabrication method thereof

Abstract

The invention relates to a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure includes: providing a substrate, and the substrate includes a polysilicon layer, a first conductive layer, a first dielectric layer, a mask layer and a sacrificial layer formed sequentially; wherein, the sacrificial layer has multiple a first trench distributed at intervals; forming a first insulating layer on the sacrificial layer; forming a protective layer, the protective layer covering only the surface of the first insulating layer above the top surface of the sacrificial layer; removing The first insulating layer located at the bottom of the first trench; removing the protective layer, part of the first insulating layer, the sacrificial layer and part of the mask layer to form a first pattern layer; The first pattern layer is a mask to remove part of the first dielectric layer, part of the first conductive layer, and part of the polysilicon layer to form a bit line structure. The present invention can obtain a bit line structure with flat sidewall and vertical appearance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] DRAM (Dynamic Random Access Memory, DRAM) is a semiconductor device commonly used in electronic equipment such as computers, which is composed of a plurality of storage units, and each storage unit usually includes a transistor and a capacitor. The gate of the transistor is electrically connected to the word line, the source is electrically connected to the bit line, and the drain is electrically connected to the capacitor. The word line voltage on the word line can control the opening and closing of the transistor, so that the stored data can be read through the bit line. Data information in the capacitor, or write data information into the capacitor. [0003] As the feature size of semiconductor integrated circuit devices continues to shrink, the requirements for the...

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Problems solved by technology

[0005] The present invention provides a semiconductor structure and a manufacturing method thereof, which are used to solve the problem of poor morphology of the bit lines formed in the prior art, so as to improve the yield rate of the semiconductor structure with the bit lines and improve the performance of the semiconductor structure

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