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Heterojunction photovoltaic cell of grid line electrode without silver paste

A photovoltaic cell and silver paste-free technology, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of high silver content, high purchase cost and high production process requirements of low-temperature silver paste, so as to save light-receiving area, The effect of improving efficiency

Pending Publication Date: 2021-06-25
ALPHA SOLAR SUZHOU CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Considering that the grid wire electrodes of heterojunction photovoltaic cells use low-temperature silver paste lower than 200 degrees, because the production process of low-temperature silver paste is more demanding, the silver content is high, and the transportation process must use cold chain logistics, the purchase cost price higher

Method used

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  • Heterojunction photovoltaic cell of grid line electrode without silver paste
  • Heterojunction photovoltaic cell of grid line electrode without silver paste
  • Heterojunction photovoltaic cell of grid line electrode without silver paste

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Embodiment Construction

[0049] As shown in the figure, in one embodiment, the implementation of this case uses a 158*158N type single crystal heterojunction non-low temperature silver paste busbar electrode battery. Since there are no fine grid electrodes on both sides of the heterojunction cell, the amount of fine grid silver paste is zero.

[0050] (1) The amount of silver paste used on the grid line electrode of the battery is reduced, which greatly reduces the manufacturing cost of the heterojunction battery,

[0051] As for the number of busbars on the cell, the current trend is to adopt a multi-gate electrode structure of 7 to 9 as much as possible, which can reduce the width of the grid lines, thereby reducing the amount of silver paste used to manufacture the grid line electrodes, and reducing the cost of the grid line electrodes. At present, the amount of high-temperature silver paste for PERC crystalline silicon multi-gate electrode cells is reduced to 74mg, which is 40mg less than that of ...

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Abstract

The invention provides a silver paste-free grid line electrode structure distributed on conductive transparent oxide films on the front surface and the back surface of a heterojunction photovoltaic cell, and the characteristics of conductivity and low resistivity of the transparent conductive oxide films are utilized, so that main grid line electrodes and collection carriers are only arranged on the transparent conductive oxide films, and fine grid electrodes are not arranged any more. Low-temperature soldering tin alloy and the transparent conductive oxide films of the battery are welded through ultrasonic welding to form a main gate electrode. The grid line electrode structure of the heterojunction battery, which does not use silver paste and does not have a fine grid line electrode, is realized. The main gate electrodes are connected with the metal welding strips through welding or conductive adhesive bonding, and electrical connection between the adjacent heterojunction cells is realized through the metal welding strips, so that the heterojunction photovoltaic cell assembly is formed. Fine gate electrodes are omitted, the light receiving area of the cell shielded by the fine gate electrodes is reduced, and the cell efficiency is improved. Meanwhile, the main gate electrode of the cell is not made of silver paste any more, so that the production cost of the heterojunction photovoltaic cell is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of a heterojunction photovoltaic cell, in particular to a heterojunction photovoltaic cell without silver paste-made grid line electrodes and the connection between the corresponding cells. Background technique [0002] A solar cell is a photoelectric element that converts energy, and its basic structure is formed by joining P-type and N-type semiconductors. Compared with the traditional solar crystalline silicon cell structure, the heterojunction cell using the heterojunction structure of amorphous silicon thin film and N-type single crystal silicon substrate combines the advantages of single crystal silicon and amorphous silicon cells, mainly in: [0003] 1) High potential for efficiency improvement. N-type silicon wafers used in heterojunction solar cells have a high minority carrier lifetime, and the symmetrical structure of amorphous silicon passivation can also obtain a low surface recombination rate,...

Claims

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Application Information

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IPC IPC(8): H01L31/0224
CPCH01L31/022425Y02E10/50
Inventor 黄子健
Owner ALPHA SOLAR SUZHOU CO LTD
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