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High-heat-dissipation metal substrate for LED and preparation method thereof

A metal substrate and function technology, applied in the direction of metal material coating process, coating, etc., can solve the problems of high cost, complicated process, and reduced thermal conductivity, so as to improve insulation performance, strong adhesion, and improve thermal conductivity Effect

Active Publication Date: 2021-06-29
HANGZHOU ANYU TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this technical solution is relatively complicated in process, high in cost, and will form micropores in the insulating layer, and the existence of micropores will reduce its thermal conductivity

Method used

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  • High-heat-dissipation metal substrate for LED and preparation method thereof
  • High-heat-dissipation metal substrate for LED and preparation method thereof
  • High-heat-dissipation metal substrate for LED and preparation method thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0085] Example 1: A high heat dissipation metal substrate for LEDs:

[0086] This embodiment provides a high heat dissipation metal substrate for LEDs, the preparation method of which includes:

[0087] S1: Preparation of fluorine-containing silane coupling agent modified graphene oxide: prepare an absolute ethanol solution of fluorine-containing silane coupling agent shown in formula (1) with a mass fraction of 2%, according to the weight ratio of coupling agent to graphene oxide It is 2:1, slowly added to 4mg / mL graphene oxide aqueous solution within 2h, at ultrasonic frequency 35KHz, ultrasonic intensity 0.5W / cm 2 1. Disperse at a stirring rate of 150r / min for 1.5h until the system is uniform, then adjust the pH of the solution to 3.0 with 2mol / L hydrochloric acid, raise the temperature to 50°C at 5°C / min for 8h, then raise the temperature to 70°C for 2h, filter with Wash with pure water, dry at 50°C for 45 minutes, and grind until the particle size is not greater than 100...

Embodiment 2

[0106] Example 2: A metal substrate with high heat dissipation for LEDs:

[0107] This embodiment provides a high heat dissipation metal substrate for LEDs, the preparation method of which includes:

[0108] S1: Preparation of fluorine-containing silane coupling agent modified graphene oxide: prepare an absolute ethanol solution of fluorine-containing silane coupling agent shown in formula (1) with a mass fraction of 2.5%, according to the weight ratio of coupling agent to graphene oxide It is 2.5:1, slowly added to the graphene oxide aqueous solution with a concentration of 3.5mg / mL within 1.5 minutes, at an ultrasonic frequency of 50KHz and an ultrasonic intensity of 0.6W / cm 2 , Disperse at 180r / min for 1h until the system is uniform, then adjust the pH of the solution to 3.2 with 2mol / L hydrochloric acid, raise the temperature to 55°C at 4°C / min for 6h, then raise the temperature to 70°C for 3h, filter and wash with pure water , dried at 55°C for 30 minutes, and ground to ...

Embodiment 3

[0127] Embodiment 3: A metal substrate with high heat dissipation for LEDs:

[0128] This embodiment provides a high heat dissipation metal substrate for LEDs, the preparation method of which includes:

[0129] S1: Preparation of modified graphene oxide: prepare an absolute ethanol solution of (3,3,3-trifluoropropyl)trimethoxysilane with a mass fraction of 2.5%, according to the weight ratio of coupling agent to graphene oxide is 2.5 : 1, slowly added to the graphene oxide aqueous solution with a concentration of 3.5mg / mL within 1.5 hours, at an ultrasonic frequency of 50KHz and an ultrasonic intensity of 0.6W / cm 2 , Disperse at 180r / min for 1h until the system is uniform, then adjust the pH of the solution to 3.2 with 2mol / L hydrochloric acid, raise the temperature to 55°C at 4°C / min for 6h, then raise the temperature to 70°C for 3h, filter and wash with pure water , dried at 55°C for 30 minutes, and ground to a particle size not greater than 100 μm;

[0130] S2: preparing ...

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Abstract

The invention relates to the technical field of LED metal substrate preparation, in particular to a high-heat-dissipation metal substrate for an LED and a preparation method of the high-heat-dissipation metal substrate. The preparation method comprises the following steps: grinding and polishing a printing surface of a metal matrix, cleaning, and drying; coating the printing surface of the metal matrix with a ceramic slurry, sintering, and cooling to room temperature to form a ceramic layer; and dipping the ceramic layer in a sol until the surface of the ceramic layer is smooth, and performing graded drying and heat treatment, wherein the ceramic slurry contains a sintering aid composed of beryllium fluoride and fluorine-containing silane coupling agent modified graphene oxide. The high-heat-dissipation metal substrate for the LED, disclosed by the invention, has the advantages of relatively high heat conduction effect, excellent insulating property, high binding force and compact material.

Description

technical field [0001] The invention relates to the technical field of LED metal substrate preparation, in particular to a high heat dissipation metal substrate for LEDs and a preparation method thereof. Background technique [0002] LED is a heat-sensitive element, and its core is a P-N junction electroluminescent device, which finally emits light through a series of electro-optical conversion processes. However, the by-product heat is not beneficial to it, and if the heat cannot be dissipated quickly, it will cause the temperature of the chip to rise. This will seriously affect its performance, mainly manifested in: the rise of temperature will cause the red shift of the chip spectrum, resulting in a decrease in light conversion efficiency; The luminescence of blue, green and white LED devices basically decreases linearly with the increase of temperature; the increase of temperature can also lead to a decrease in the reliability of packaging materials; in addition, the inc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/64C04B35/10C23C26/00
CPCC04B35/64C04B35/62222C04B35/10C23C26/00C04B2235/445C04B2235/425C04B2235/3873C04B2235/447
Inventor 方涌章贤骏雷诺成朱魁
Owner HANGZHOU ANYU TECH CO LTD
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