Sb2Te3 phase change material based on oxygen doping, phase change memory and preparation method

A phase-change material and phase-change storage technology, applied in heat exchange materials, chemical instruments and methods, sustainable manufacturing/processing, etc., can solve the problem of harsh selection conditions, unfavorable large-scale commercial production, structural characteristics and processes Parameter sensitivity and other issues

Active Publication Date: 2021-07-06
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, the preparation process of the heterostructure and superlattice-like structure is more complicated, the selection conditions of another material are more stringent, and the device characteristics are very important to the heterogeneous or superlattice-like / Sb 2 Te 3 The structural characteristics and process parameters of the interface are particularly sensitive, which is not conducive to large-scale commercial production

Method used

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  • Sb2Te3 phase change material based on oxygen doping, phase change memory and preparation method
  • Sb2Te3 phase change material based on oxygen doping, phase change memory and preparation method
  • Sb2Te3 phase change material based on oxygen doping, phase change memory and preparation method

Examples

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Embodiment 1

[0046] The O-Sb used for phase-change memory devices prepared in this example 2 Te 3 The general chemical formula of phase change memory thin film material is (ST) 1-x o x , where ST stands for Sb 2 Te 3 , x=0.1 in this embodiment.

[0047] O-Sb 2 Te 3 The phase-change memory thin film material is prepared by magnetron sputtering; during preparation, high-purity argon is introduced as the sputtering gas, and a small amount of oxygen is introduced to provide an aerobic atmosphere. The sputtering pressure is 0.5Pa, Sb 2 Te 3 The target adopts AC power supply, and the power supply power is 60W. Concrete preparation process comprises the following steps:

[0048] 1. Select SiO with a size of 1cm×1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities.

[0049] a) SiO 2 The / Si(100) substrate was placed in an acetone solution for 10 minutes with ultrasonic vibration of 40W power, and rinsed with deionized water.

[...

Embodiment 2

[0073] The O-Sb used for phase-change memory devices prepared in this example 2 Te 3 The general chemical formula of phase change memory thin film material is (ST) 1-x o x , where ST stands for Sb 2 Te 3 , x=0.1 in this embodiment.

[0074] O-Sb 2 Te 3 The phase change memory thin film material is prepared by magnetron sputtering. During the preparation, high-purity argon gas was introduced as the sputtering gas, and a small amount of oxygen was introduced to provide an aerobic atmosphere. The sputtering pressure was 0.5Pa, and Sb 2 Te 3 The target adopts AC power supply, and the power supply power is 60W. Concrete preparation process comprises the following steps:

[0075] 1. Select SiO with a size of 1cm×1cm 2 / Si(100) substrate, clean the surface and back, remove dust particles, organic and inorganic impurities.

[0076] a) SiO 2 The / Si(100) substrate was placed in an acetone solution for 10 minutes with ultrasonic vibration of 40W power, and rinsed with deion...

Embodiment 3

[0090] This example uses the Materials Studio software to add Sb with a concentration of 5%, 10% and 20% to the O element respectively. 2 Te 3 Modeling of phase change memory thin film materials, randomization of three models by first principles, simulation of melting and quenching process to obtain OST phase change memory with O element doping concentrations of 5%, 10% and 20% respectively Amorphous model for thin film materials, the results are as Figure 7 shown. Simplified "shell-core" structure O-Sb using Materials Studio software 2 Te 3 and pure Sb 2 Te 3 Modeling, using first-principles to simulate the "shell-core" structure O-Sb at different temperatures 2 Te 3 model and pure Sb 2 Te 3 Atomic motion and the "shell-core" structure O-Sb at the same temperature 2 Te 3 In the model, the movement of atoms in the middle area and the atoms in the area close to the shell is formed into an intuitive image through data processing. Figure 8 is the influence of the si...

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Abstract

The invention provides a Sb2Te3 phase change material based on oxygen doping, a phase change memory and a preparation method, and belongs to the technical field of micro-nano electronics. According to the method for comprehensively regulating and controlling the micro-structure and the device characteristics of the Sb2Te3 by adopting a simple doping process and the application of the method, a 'shell-core' micro-structure is formed in an Sb2Te3 phase change layer, an amorphous low-heat-conductivity 'shell layer' crystal boundary plays a role similar to a heterogeneous interface, phase-changed crystal grains, namely the 'core' part, are physically partitioned to achieve a heat resistance effect, the electric heat utilization efficiency is improved, and the RESET power consumption is reduced. Atomic migration of Sb2Te3 grains in the phase change process is blocked by the amorphous shell layer grain boundary, and the reliability and the cyclic erasing frequency of the device are improved. Meanwhile, doping elements and core phase change material elements form bonds, the amorphous stability of the phase change material can be effectively improved, and the comprehensive performance of the device can be comprehensively improved through the comprehensive effect of the above aspects.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and more specifically, relates to a method based on oxygen-doped Sb 2 Te 3 The "shell-core" structure phase change material and phase change memory. Background technique [0002] In today's era of rapid development of electronic technology and information industry, with the explosive growth of data, people have higher and higher performance requirements for non-volatile memory. Phase change memory (PCM) is considered by the International Semiconductor Industry Association to be the most likely to replace flash memory and dynamic memory and become the mainstream memory in the future due to its advantages of high integration, fast response, long cycle life and low power consumption. [0003] The basic principle of phase change memory is to use electric pulse signal to act on the memory cell, so that the phase change material undergoes reversible phase transition between amorphous s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K5/02H01L45/00
CPCC09K5/02H10N70/231H10N70/8828Y02P20/10
Inventor 程晓敏曾运韬缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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